IRFP27N60K, SiHFP27N60K
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
180
56
86
Single
D
FEATURES
600
0.18
• Low Gate Charge Q
g
Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Enhanced Body Diode dV/dt Capability
• Compliant to RoHS Directive 2002/95/EC
TO-247AC
APPLICATIONS
• Hard Switching Primary or PFC Switch
G
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
S
N-Channel MOSFET
S
D
G
• Motor Drive
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-247AC
IRFP27N60KPbF
SiHFP27N60K-E3
IRFP27N60K
SiHFP27N60K
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
T
C
= 25 °C
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
600
± 30
27
18
110
4.0
530
27
50
500
13
- 55 to + 150
300
d
10
1.1
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
A
UNIT
V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 1.4 mH, R
g
= 25
,
I
AS
= 27 A, dV/dt = 13 V/ns (see fig. 12).
c. I
SD
27 A, dI/dt
390 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91219
S11-0487-Rev. C, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP27N60K, SiHFP27N60K
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.24
-
MAX.
40
-
0.29
°C/W
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
T
J
= 25 °C, I
F
= 27 A, dI/dt = 100 A/μs
b
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 30 V
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 16 A
b
V
DS
= 50 V, I
D
= 16 A
V
GS
= 0 V
V
DS
= 25 V
f = 1.0 MHz, see fig. 5
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
DS
= 1.0 V , f = 1.0 MHz
V
DS
= 480 V , f = 1.0 MHz
V
DS
= 0 V to 480 V
I
D
= 27 A, V
DS
= 480 V
see fig. 6 and 13
b
600
-
3.0
-
-
-
-
14
-
640
-
-
-
-
0.18
-
-
-
5.0
± 100
50
250
0.22
-
V
mV/°C
V
nA
μA
S
-
-
-
-
-
-
-
4660
460
41
5490
120
250
-
-
-
27
110
43
38
-
-
-
-
-
-
180
56
86
-
-
-
-
ns
nC
pF
V
GS
= 10 V
-
-
-
V
DD
= 300 V, I
D
= 27 A
R
g
= 4.3
,
V
GS
= 10 V, see fig.
10
b
-
-
-
-
-
-
-
-
-
-
-
-
620
11
36
27
A
110
1.5
920
16
53
V
ns
μC
A
G
S
T
J
= 25 °C, I
S
= 27 A, V
GS
= 0 V
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
c. C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 % to 80% V
DS
.
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Document Number: 91219
S11-0487-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP27N60K, SiHFP27N60K
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1000
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
TOP
1000.00
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current
(Α
)
100
100.00
T J = 150°C
10.00
1
1.00
0.1
T J = 25°C
0.10
5.0V
0.01
20µs PULSE WIDTH
Tj = 25°C
0.001
0.1
1
10
100
0.01
5.0
7.0
9.0
VDS = 100V
20µs PULSE WIDTH
11.0
13.0
15.0
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100
3.5
ID, Drain-to-Source Current (A)
R
DS(on)
, Drain-to-Source On Resistance
10
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
I
D
= 28A
3.0
2.5
5.0V
1
(Normalized)
2.0
1.5
0.1
1.0
20µs PULSE WIDTH
Tj = 150°C
0.01
0.1
1
10
100
0.5
V
GS
= 10V
0.0
-60
-40
-20
0
20
40
60
80
100
120
140
160
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
T
J
, Junction Temperature
(
°
C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91219
S11-0487-Rev. C, 21-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP27N60K, SiHFP27N60K
Vishay Siliconix
100000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
1000
10000
100
C, Capacitance(pF)
Ciss
1000
I
SD
, Reverse Drain Current (A)
10
T
J
150
°
C
=
Coss
100
T
J
25
°
C
=
1
Crss
10
1
10
100
1000
V
GS
= 0 V
0.1
0.2
0.5
0.8
1.1
1.4
VDS , Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
V
SD
,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
12
I
D
=
28A
10
V
GS
, Gate-to-Source Voltage (V)
7
ID, Drain-to-Source Current (A)
V
DS
= 480V
V
DS
= 300V
V
DS
= 120V
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
10
100µsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
10
100
5
2
10msec
1000
10000
0
0
30
60
90
120
150
0.1
Q
G
, Total Gate Charge (nC)
VDS , Drain-toSource Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91219
S11-0487-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP27N60K, SiHFP27N60K
Vishay Siliconix
R
D
30
V
DS
V
GS
D.U.T.
+
-
V
DD
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
25
R
G
I
D
, Drain Current (A)
20
15
Fig. 10a - Switching Time Test Circuit
10
V
DS
5
90 %
0
25
50
75
100
125
150
T
C
, Case Temperature (°C)
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
1
(Z
thJC
)
D = 0.50
0.1
0.20
Thermal Response
0.10
0.05
P
DM
0.01
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D =
2. Peak T
0.001
0.00001
0.0001
0.001
0.01
t
1
/ t
2
+T
C
1
J
= P
DM
x Z
thJC
0.1
t
1
, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91219
S11-0487-Rev. C, 21-Mar-11
www.vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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