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BUK762R0-40E118

Description
MOSFET N-channel TrenchMOS standard level FET
Categorysemiconductor    Discrete semiconductor   
File Size208KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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MOSFET N-channel TrenchMOS standard level FET

BUK762R0-40E118 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerNXP
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-263-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current120 A
Rds On - Drain-Source Resistance1.65 mOhms
Vgs th - Gate-Source Threshold Voltage3 V
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge109.2 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ConfigurationSingle
Channel ModeEnhancement
PackagingReel
Fall Time46 ns
Pd - Power Dissipation293 W
Rise Time36 ns
Factory Pack Quantity800
Transistor Type1 N-Channel
Typical Turn-Off Delay Time79 ns
Typical Turn-On Delay Time29 ns
BUK762R0-40E
13 July 2012
N-channel TrenchMOS standard level FET
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating of greater than 1V at 175 °C
1.3 Applications
12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 1
T
mb
= 25 °C;
Fig. 2
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11
V
GS
= 10 V; I
D
= 25 A; V
DS
= 32 V;
Fig. 13; Fig. 14
[1]
Continuous current is limited by package.
[1]
Min
-
-
-
Typ
-
-
-
Max
40
120
293
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
1.65
2
Dynamic characteristics
Q
GD
gate-drain charge
-
33.4
-
nC
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