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AUIRFZ44ZSTRL

Description
MOSFET AUTO 55V 1 N-CH HEXFET 13.9mOhms
CategoryDiscrete semiconductor    The transistor   
File Size697KB,12 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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AUIRFZ44ZSTRL Overview

MOSFET AUTO 55V 1 N-CH HEXFET 13.9mOhms

AUIRFZ44ZSTRL Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time16 weeks
Is SamacsysN
Other featuresAVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)105 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (Abs) (ID)51 A
Maximum drain current (ID)51 A
Maximum drain-source on-resistance0.0139 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)80 W
Maximum pulsed drain current (IDM)200 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrier
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
 
AUTOMOTIVE GRADE
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a wide
variety of other applications.
S
D
G
TO-220AB
AUIRFZ44Z
AUIRFZ44Z
AUIRFZ44ZS
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max.
I
D
D
 
55V
13.9m
51A
S
G
D
2
Pak
AUIRFZ44ZS
G
Gate
D
Drain
S
Source
Base part number
AUIRFZ44Z
AUIRFZ44ZS
Package Type
TO-220
D
2
-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRFZ44Z
AUIRFZ44ZS
AUIRFZ44ZSTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
51
36
200
80
0.53
± 20
86
105
See Fig.15,16, 12a, 12b
-55 to + 175
300
10 lbf•in (1.1N•m)
 
Units
A
W
W/°C
V
mJ
A
mJ
°C 
 
 
Thermal Resistance
 
Symbol
R
JC
R
CS
R
JA
R
JA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient ( PCB Mount, steady state)
Typ.
–––
0.50
–––
Max.
1.87
–––
62
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2017-09-25

AUIRFZ44ZSTRL Related Products

AUIRFZ44ZSTRL AUIRFZ44ZS
Description MOSFET AUTO 55V 1 N-CH HEXFET 13.9mOhms MOSFET AUTO 55V 1 N-CH HEXFET 13.9mOhms
Is it Rohs certified? conform to conform to
Maker Infineon Infineon
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Factory Lead Time 16 weeks 16 weeks
Other features AVALANCHE RATED, ULTRA-LOW RESISTANCE AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas) 105 mJ 105 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 55 V 55 V
Maximum drain current (Abs) (ID) 51 A 51 A
Maximum drain current (ID) 51 A 51 A
Maximum drain-source on-resistance 0.0139 Ω 0.0139 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB TO-263AB
JESD-30 code R-PSSO-G2 R-PSSO-G2
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 80 W 80 W
Maximum pulsed drain current (IDM) 200 A 200 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Matte Tin (Sn) - with Nickel (Ni) barrier Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 30 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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