BSC057N03MS G
OptiMOS™3
M-Series Power-MOSFET
Features
• Optimized for 5V driver application (Notebook, VGA, POL)
• Low FOM
SW
for High Frequency SMPS
• 100% avalanche tested
• N-channel
• Very low on-resistance
R
DS(on)
@
V
GS
=4.5 V
• Excellent gate charge x
R
DS(on)
product (FOM)
• Qualified according to JEDEC
1)
for target applications
• Superior thermal resistance
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
V
GS
=10 V
V
GS
=4.5 V
I
D
30
5.7
7.2
71
PG-TDSON-8
A
V
mW
Type
BSC057N03MS G
Package
PG-TDSON-8
Marking
057N03MS
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=4.5 V,
T
C
=25 °C
V
GS
=4.5 V,
T
C
=100 °C
V
GS
=4.5 V,
T
A
=25 °C,
R
thJA
=50 K/W
2)
Pulsed drain current
3)
Avalanche current, single pulse
4)
Avalanche energy, single pulse
I
D,pulse
I
AS
E
AS
T
C
=25 °C
T
C
=25 °C
I
D
=40 A,
R
GS
=25
W
I
D
=50 A,
V
DS
=24 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
71
45
63
40
Unit
A
15
284
50
25
mJ
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
1)
V
GS
±16
V
J-STD20 and JESD22
Rev. 2.1
page 1
2013-05-17
BSC057N03MS G
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Power dissipation
Symbol Conditions
P
tot
T
C
=25 °C
T
A
=25 °C,
R
thJA
=50 K/W
2)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j
,
T
stg
Value
45
2.5
-55 ... 150
55/150/56
°C
Unit
W
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
Thermal resistance, junction - case
R
thJC
bottom
top
Device on PCB
R
thJA
6 cm
2
cooling area
2)
-
-
-
-
-
-
2.8
20
50
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=250 µA
V
DS
=30 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=30 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=16 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=30 A
V
GS
=10 V,
I
D
=30 A
Gate resistance
Transconductance
2)
30
1
-
-
-
0.1
-
2
1
V
µA
-
-
-
-
0.6
10
10
5.8
4.8
1.3
70
100
100
7.2
5.7
2.3
-
W
S
nA
mW
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=30 A
35
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information
Rev. 2.1
page 2
2013-05-17
BSC057N03MS G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g
V
DD
=15 V,
I
D
=30 A,
V
GS
=0 to 10 V
V
DS
=0.1 V,
V
GS
=0 to 4.5 V
V
DD
=15 V,
V
GS
=0 V
V
DD
=15 V,
I
D
=30 A,
V
GS
=0 to 4.5 V
-
-
-
-
-
-
-
6.9
3.7
3.3
6.5
14
3.0
30
9.2
4.9
5.5
9.8
19
-
40
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=15 V,
V
GS
=4.5 V,
I
D
=30 A,
R
G
=1.6
W
V
GS
=0 V,
V
DS
=15 V,
f
=1 MHz
-
-
-
-
-
-
-
2300
710
47
12
6.6
14
6.8
3100
940
-
-
-
-
-
ns
pF
Values
typ.
max.
Unit
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Q
g(sync)
Q
oss
-
-
12
18
17
25
nC
I
S
I
S,pulse
V
SD
-
T
C
=25 °C
-
V
GS
=0 V,
I
F
=30 A,
T
j
=25 °C
V
R
=15 V,
I
F
=I
S
,
di
F
/dt =400 A/µs
-
-
-
0.87
41
284
1.1
A
V
Reverse recovery charge
4)
5)
Q
rr
-
-
10
nC
See figure 13 for more detailed information
See figure 16 for gate charge parameter definition
Rev. 2.1
page 3
2013-05-17
BSC057N03MS G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
)
parameter:
V
GS
50
80
70
40
60
30
50
P
tot
[W]
I
D
[A]
40
4.5 V
10 V
20
30
20
10
10
0
0
40
80
120
160
0
0
40
80
120
160
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
limited by on-state
resistance
10 µs
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
1 µs
10
2
0.5
100 µs
1
DC
Z
thJC
[K/W]
0.2
0.1
0.05
0.02
I
D
[A]
10
1
1 ms
10 ms
0.1
0.01
single pulse
10
0
10
-1
10
-1
10
0
10
1
10
2
0.01
0
0
0
0
0
0
1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 2.1
page 4
2013-05-17
BSC057N03MS G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
200
5V
4.5 V
3V
3.2 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
10
8
150
3.5 V
10 V
4V
R
DS(on)
[mW]
4V
6
4.5 V
5V
6V
10 V
I
D
[A]
100
4
3.5 V
50
3.2 V
3V
2.8 V
2
0
0
1
2
3
0
0
10
20
30
40
50
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
160
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
160
140
120
120
100
80
g
fs
[S]
150 °C
25 °C
I
D
[A]
80
60
40
40
20
0
0
1
2
3
4
5
0
0
40
80
120
160
V
GS
[V]
I
D
[A]
Rev. 2.1
page 5
2013-05-17
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