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FDMA910PZ Single P-Channel PowerTrench
®
MOSFET
June 2014
FDMA910PZ
Single P-Channel PowerTrench
®
MOSFET
-20 V, -9.4 A, 20 mΩ
Features
Max r
DS(on)
= 20 mΩ at V
GS
= -4.5 V, I
D
= -9.4 A
Max r
DS(on)
= 24 mΩ at V
GS
= -2.5 V, I
D
= -8.6 A
Max r
DS(on)
= 34 mΩ at V
GS
= -1.8 V, I
D
= -7.2 A
Low Profile - 0.8 mm maximum in the new package MicroFET
2x2 mm
HBM ESD protection level > 2.8k V typical (Note 3)
Free from halogenated compounds and antimony oxides
RoHS Compliant
General Description
This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable
applications.It features a MOSFET with low on-state resistance
and zener diode protection against ESD. The MicroFET 2X2
package offers exceptional thermal performance for its physical
size and is well suited to linear mode applications.
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