CS60-12io1
Thyristor
V
RRM
I
TAV
V
T
=
=
=
1200 V
60 A
1.14 V
Single Thyristor
Part number
CS60-12io1
Backside: anode
2
3
1
Features / Advantages:
●
Thyristor for line frequency
●
Planar passivated chip
●
Long-term stability
Applications:
●
Line rectifying 50/60 Hz
●
Softstart AC motor control
●
DC Motor control
●
Power converter
●
AC power control
●
Lighting and temperature control
Package:
PLUS247
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20140122a
© 2014 IXYS all rights reserved
CS60-12io1
Thyristor
Symbol
V
RSM/DSM
V
RRM/DRM
I
R/D
V
T
Definition
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 140°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 140 °C
T
VJ
= 140 °C
min.
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
forward voltage drop
Ratings
typ.
max.
1300
1200
200
10
1.18
1.44
1.14
1.46
60
75
0.82
5.3
0.32
0.15
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 140 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 140 °C
V
R
= 0 V
T
VJ
= 25°C
T
C
= 140 °C
74
10
5
0.5
T
VJ
= 140°C; f = 50 Hz
t
P
= 200 µs; di
G
/dt = 0.3 A/µs;
I
G
=
0.3 A; V
D
=
⅔
V
DRM
non-repet., I
T
=
60 A
500 A/µs
1000 V/µs
1.5
1.6
100
200
0.2
10
t
p
= 10 µs
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
V
D
= 6 V R
GK
=
∞
V
D
= ½ V
DRM
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
T
VJ
= 25 °C
T
VJ
= 25 °C
T
VJ
= 25 °C
150
450
200
2
V
V
mA
mA
V
mA
mA
mA
µs
µs
repetitive, I
T
= 180 A
360
1.40
1.51
1.19
1.29
Unit
V
V
µA
mA
V
V
V
V
A
A
V
mΩ
K/W
K/W
W
kA
kA
kA
kA
V
R/D
= 1200 V
V
R/D
= 1200 V
I
T
=
I
T
=
60 A
60 A
I
T
= 120 A
I
T
= 120 A
I
TAV
I
T(RMS)
V
T0
r
T
R
thJC
R
thCH
P
tot
I
TSM
average forward current
RMS forward current
threshold voltage
slope resistance
T
C
= 110°C
180° sine
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
9.80 kA²s
9.49 kA²s
7.08 kA²s
6.87 kA²s
pF
W
W
W
C
J
P
GM
P
GAV
(di/dt)
cr
junction capacitance
max. gate power dissipation
V
R
= 400 V f = 1 MHz
t
P
= 30 µs
t
P
= 300 µs
average gate power dissipation
critical rate of rise of current
150 A/µs
(dv/dt)
cr
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
critical rate of rise of voltage
V
D
=
⅔
V
DRM
R
GK
=
∞;
method 1 (linear voltage rise)
V
D
= 6 V
V
D
= 6 V
V
D
=
⅔
V
DRM
T
VJ
= 140°C
T
VJ
= 25 °C
T
VJ
= -40 °C
T
VJ
= 25 °C
T
VJ
= -40 °C
T
VJ
= 140 °C
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
latching current
holding current
gate controlled delay time
turn-off time
V
R
= 100 V; I
T
= 60 A; V
D
=
⅔
V
DRM
T
VJ
= 140 °C
di/dt = 10 A/µs; dv/dt =
20 V/µs; t
p
= 200 µs
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20140122a
© 2014 IXYS all rights reserved
CS60-12io1
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
F
C
d
Spp/App
d
Spb/Apb
mounting force with clip
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
PLUS247
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
70
140
125
140
Unit
A
°C
°C
°C
g
N
mm
mm
6
20
5.5
5.5
120
Product Marking
Logo
Part No.
Date Code
UL listed
Assembly Code
Assembly Line
IXYS
YYWW Z
abcd
Ordering
Standard
Part Number
CS60-12io1
Marking on Product
CS60-12io1
Delivery Mode
Tube
Quantity
30
Code No.
503202
Similar Part
CS60-14io1
CS60-16io1
Package
PLUS247 (3)
PLUS247 (3)
Voltage class
1400
1600
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Thyristor
* on die level
T
VJ
= 140 °C
V
0 max
R
0 max
0.82
3
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20140122a
© 2014 IXYS all rights reserved
CS60-12io1
Outlines PLUS247
E
Q
R
D
A
A2
A
A
D2
View A - A
D1
4
1
L1
E1
L
Sym.
Inches
min.
max.
Millimeter
min.
max.
2
3
b
b1
b2
e
C
A1
A
A1
A2
b
b1
b2
C
D
D1
D2
E
E1
e
L
L1
Q
R
0.190 0.205
0.090 0.100
0.075 0.085
0.045 0.055
0.075 0.084
0.115 0.123
0.024 0.031
0.819 0.840
0.515
-
0.010 0.053
0.620 0.635
0.530
-
0.215 BSC
0.780 0.800
0.150 0.170
0.220 0.244
0.170 0.190
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
13.07
-
0.51
1.35
15.75 16.13
13.45
-
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
2
3
1
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20140122a
© 2014 IXYS all rights reserved
CS60-12io1
Thyristor
120
100
1000
80
T
VJ
= 45°C
1200
50 Hz, 80% V
RRM
10000
V
R
= 0 V
I
T
60
I
TSM
800
T
VJ
= 45°C
It
T
VJ
= 125°C
T
VJ
= 125°C
2
[A]
40
[A]
600
20
0
0.4
125°C
150°C
T
VJ
= 25°C
400
0.8
1.2
1.6
0.01
0.1
1
[A
2
s]
1000
1
2
2
3
4 5 6 7 8 910
V
T
[V]
Fig. 1 Forward characteristics
t [s]
Fig. 2 Surge overload current
t [ms]
Fig. 3 I t versus time (1-10 ms)
10
1: I
GD
, T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
1000
100
dc =
1
0.5
0.4
0.33
0.17
0.08
5
4
6
80
100
V
G
1
2
3
t
gd
[μs]
typ.
Limit
I
T(AV)M
60
[A]
40
[V]
1
10
T
VJ
= 125°C
20
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10 W
0.1
1
10
100
1000
10000
1
10
0
100
1000
0
25
50
75
100 125 150
I
G
[mA]
Fig. 4 Gate trigger characteristics
I
G
[mA]
Fig. 5 Gate controlled delay time
T
C
[°C]
Fig. 6 Max. forward current
at case temperature
100
dc =
1
0.5
0.4
0.33
0.17
0.08
0.4
80
60
P
(AV)
40
R
thHA
0.6
0.8
1.0
2.0
4.0
8.0
0.3
Z
thJC
0.2
R
thi
[K/W]
0.041
0.043
0.039
0.076
0.121
10
1
10
2
10
3
t
i
[s]
0.008
0.0001
0.04
0.57
0.37
10
4
[K/W]
0.1
[W]
20
0
0
20
40
60
0
50
100
150
0.0
10
0
I
F(AV)
[A]
T
amb
[°C]
t [ms]
Fig. 8 Transient thermal impedance
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20140122a
© 2014 IXYS all rights reserved
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