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BLF521112

Description
RF MOSFET Transistors TRANSISTOR UHF PWR DMOS
Categorysemiconductor    Discrete semiconductor   
File Size193KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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RF MOSFET Transistors TRANSISTOR UHF PWR DMOS

BLF521112 Parametric

Parameter NameAttribute value
Product CategoryRF MOSFET Transistors
ManufacturerNXP
RoHSDetails
Transistor PolarityN-Channel
Id - Continuous Drain Current1 A
Vds - Drain-Source Breakdown Voltage40 V
TechnologySi
Gain13 dB
Output Power2 W
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseSOT-172D
PackagingTube
ConfigurationSingle
Operating Frequency500 MHz
Pd - Power Dissipation10 W
Factory Pack Quantity40
TypeRF Power MOSFET
Vgs - Gate-Source Voltage+/- 20 V
Vgs th - Gate-Source Threshold Voltage4.5 V
BLF521
UHF power MOS transistor
Rev. 6 — 1 September 2015
Product data sheet
IMPORTANT NOTICE
Dear customer,
As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as
an independent company under the new trade name Ampleon, which will be used
in future data sheets together with new contact details.
In data sheets, where the previous Philips references is mentioned, please use
the new links as shown below.
http://www.philips.semiconductors.com use http://www.ampleon.com
http://www.semiconductors.philips.com use http://www.ampleon.com (Internet)
sales.addresses@www.semiconductors.philips.com use
http://www.ampleon.com/sales
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © Ampleon B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest
sales office (details via http://www.ampleon.com/sales).
Thank you for your cooperation and understanding,
Ampleon
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