EEWORLDEEWORLDEEWORLD

Part Number

Search

1SV277

Description
Varactor Diodes 10V C1=4.0-4.9pF
CategoryDiscrete semiconductor    diode   
File Size149KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric View All

1SV277 Online Shopping

Suppliers Part Number Price MOQ In stock  
1SV277 - - View Buy Now

1SV277 Overview

Varactor Diodes 10V C1=4.0-4.9pF

1SV277 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerToshiba Semiconductor
Parts packaging codeSOD
package instructionR-PDSO-G2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Minimum breakdown voltage10 V
ConfigurationSINGLE
Diode Capacitance Tolerance10.11%
Minimum diode capacitance ratio2
Nominal diode capacitance4.5 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandULTRA HIGH FREQUENCY
JESD-30 codeR-PDSO-G2
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage10 V
Maximum reverse current0.003 µA
Reverse test voltage10 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
1SV277
TOSHIBA Variable Capacitance Diode
Silicon Epitaxial Planar Type
1SV277
VCO for UHF Band Radio
High capacitance ratio: C
1 V
/C
4 V
= 2.3 (typ.)
Low series resistance: r
s
= 0.42
(typ.)
Small package
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Reverse voltage
Junction temperature
Storage temperature range
Symbol
V
R
T
j
T
stg
Rating
10
125
−55~125
Unit
V
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
JEITA
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
Symbol
V
R
I
R
C
1 V
C
4 V
C
1 V
/C
4 V
r
s
I
R
=
1
μA
V
R
=
10 V
V
R
=
1 V, f
=
1 MHz
V
R
=
4 V, f
=
1 MHz
V
R
=
1 V, f
=
470 MHz
Test Condition
Min
10
4.0
1.85
2.0
Typ.
4.5
2.0
2.3
0.42
Max
3
4.9
2.35
0.55
Unit
V
nA
pF
pF
Ω
Marking
1
2007-11-01

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2618  769  1084  194  509  53  16  22  4  11 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号