BAT42WS, BAT43WS
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diode
FEATURES
• These diodes feature very low turn-on voltage
and fast switching. These devices are
protected by a PN junction guard ring against
excessive voltage, such as electrostatic
discharges
• For general purpose applications
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
MECHANICAL DATA
Case:
SOD-323
Weight:
approx. 4.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
BAT42WS
BAT43WS
ORDERING CODE
BAT42WS-E3-08 or BAT42WS-E3-18
BAT42WS-HE3-08 or BAT42WS-HE3-18
BAT43WS-E3-08 or BAT43WS-E3-18
BAT43WS-HE3-08 or BAT43WS-HE3-18
INTERNAL
CONSTRUCTION
Single diode
Single diode
TYPE MARKING
L2
Tape and reel
L3
REMARKS
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Repetitive peak reverse voltage
Forward continuous current
Surge forward current
Power dissipation
(1)
Note
(1)
Valid provided that electrodes are kept at ambient temperature
(1)
(1)
(1)
TEST CONDITION
SYMBOL
V
RRM
I
F
VALUE
30
200
500
4
150
UNIT
V
mA
mA
A
mW
Repetitive peak forward current
t
p
< 1 s,
< 0.5
t
p
< 10 ms
I
FRM
I
FSM
P
tot
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Operating temperature range
Storage temperature range
Note
(1)
Valid provided that electrodes are kept at ambient temperature
(1)
TEST CONDITION
SYMBOL
R
thJA
T
j
T
op
T
stg
VALUE
650
125
-55 to +125
-55 to +150
UNIT
K/W
°C
°C
°C
Rev. 1.5, 14-Oct-16
Document Number: 81813
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BAT42WS, BAT43WS
www.vishay.com
(T
amb
= 25 °C, unless otherwise specified)
TEST CONDITION
I
R
= 100 μA (pulsed)
V
R
= 25 V
V
R
= 25 V, T
j
= 100 °C
I
F
= 200 mA
I
F
= 10 mA
Forward voltage
(1)
I
F
= 50 mA
I
F
= 2 mA
I
F
= 15 mA
Diode capacitance
Reverse recovery time
Note
(1)
Pulse test; t
300 μs, t /T < 0.02
p
p
V
R
= 1 V, f = 1 MHz
I
F
= 10 mA, I
R
= 100 mA,
i
R
= 1 mA, R
L
= 100
BAT42WS
BAT42WS
BAT43WS
BAT43WS
PART
SYMBOL
V
(BR)
I
R
I
R
V
F
V
F
V
F
V
F
V
F
C
D
t
rr
7
5
260
MIN.
30
0.5
100
1000
400
650
330
450
TYP.
MAX.
UNIT
V
μA
μA
mV
mV
mV
mV
mV
pF
ns
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS
PARAMETER
Reverse breakdown voltage
Leakage current
(1)
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
P
tot
- Admissible Power Dissipation (mW)
250
I
R
- Reverse Leackage Current (µA)
1000
125 °C
200
150
100
50
0
0
50
100
150
T
amb
- Ambient Temperature (°C)
100
100 °C
75 °C
10
1
50 °C
25 °C
0.1
0.01
0
10
20
30
40
V
R
- Reverse
Voltage
(V)
50
20981
18444
Fig. 1 -
Admissible Power Dissipation vs. Ambient Temperature
Fig. 3 -
Typical Reverse Characteristics
1000
14
C
D
- Diode Capacitance (pF)
I
F
- Forward Current (mA)
100
125 °C
- 40 °C
12
10
8
6
4
2
0
10
1
25 °C
0.1
0.01
0
18443
200
400
600 800 1000 1200
V
F
- Instantaneous Forward
Voltage
(mV)
0
18445
5
10
15
20
25
30
V
R
- Reverse
Voltage
(V)
Fig. 2 -
Typical Forward Characteristics
Fig. 4 -
Typical Capacitance vs. Reverse Voltage
Rev. 1.5, 14-Oct-16
Document Number: 81813
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BAT42WS, BAT43WS
www.vishay.com
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-323
1.15 [0.045]
0.8 [0.031]
0.2 [0.008]
0.1 [0.004] max.
1.1 [0.043]
Vishay Semiconductors
0.15 [0.006]
0.25 [0.010]
1.95 [0.077]
Cathode bar
1.60 [0.063]
0.40 [0.016]
0.20 [0.008]
2.85 [0.112]
2.50 [0.098]
Footprint recommendation:
0.8 [0.031]
1.5 [0.059]
0° - 8°
0.40 [0.016]
0.10 [0.004]
0.8 [0.031]
1.6 [0.063]
Document no.:
S8-V-3910.02-001
(4)
Created - Date: 24.August.2004
Rev. 6 - Date: 23.Sept.2016
17443
Rev. 1.5, 14-Oct-16
Document Number: 81813
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
0.6 [0.024]
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Revision: 08-Feb-17
1
Document Number: 91000