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BUK7Y20-30B115

Description
MOSFET N-CHANNEL TRENCHMOS STANDARD LEVEL FET
Categorysemiconductor    Discrete semiconductor   
File Size162KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BUK7Y20-30B115 Overview

MOSFET N-CHANNEL TRENCHMOS STANDARD LEVEL FET

BUK7Y20-30B115 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerNXP
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseLFPAK56-5
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current39.5 A
Rds On - Drain-Source Resistance16 mOhms
ConfigurationSingle
PackagingMouseReel
PackagingCut Tape
PackagingReel
Factory Pack Quantity1500
Transistor Type1 N-Channel
BUK7Y20-30B
N-channel TrenchMOS standard level FET
Rev. 04 — 7 April 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V Loads
Automotive systems
General purpose power switch
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 4
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max Unit
30
V
39.5 A
59
W
Static characteristics
R
DSon
V
GS
= 10 V; I
D
= 20 A;
T
j
= 25 °C; see
Figure 12;
see
Figure 13
-
16
20
mΩ
Avalanche ruggedness
E
DS(AL)S
non-repetitive
I
D
= 39.5 A; V
sup
30 V;
drain-source
R
GS
= 50
Ω;
V
GS
= 10 V;
avalanche energy T
j(init)
= 25 °C; unclamped
gate-drain charge I
D
= 20 A; V
DS
= 24 V;
V
GS
= 10 V; see
Figure 14
-
-
45
mJ
Dynamic characteristics
Q
GD
-
3.84 -
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