DMP2010UFG
20V P-CHANNEL ENHANCEMENT MODE MOSFET
®
POWERDI
Product Summary
ADVANCE INFORMATION
ADVANCE INFORMATION
NEW PRODUCT
V
(BR)DSS
-20V
R
DS(ON)
Max
9.5mΩ @ V
GS
= -4.5V
12.5mΩ @ V
GS
= -2.5V
I
D
Max
T
C
= +25°
C
-42A
Features
Low R
DS(ON)
– Ensures On State Losses Are Minimized
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
Occupies Just 33% of The Board Area Occupied by SO-8
Enabling Smaller End Product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
), yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: POWERDI
®
3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (Approximate)
Pin 1
S
S
G
Applications
Load Switch
Power Management Functions
POWERDI
®
3333-8
S
D
G
D
D
D
D
S
Equivalent Circuit
Top View
Bottom View
Ordering Information
(Note 4)
Part Number
DMP2010UFG-7
DMP2010UFG-13
Notes:
Case
POWERDI
®
3333-8
POWERDI
®
3333-8
Packaging
2000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
YYWW
S49 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 15 = 2015)
WW = Week Code (01 to 53)
S49
POWERDI is a registered trademark of Diodes Incorporated.
DMP2010UFG
Document number: DS37848 Rev. 2 - 2
1 of 7
www.diodes.com
September 2015
© Diodes Incorporated
DMP2010UFG
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Symbol
V
DSS
V
GSS
T
A
= +25°
C
T
C
= +25°
C
I
D
I
S
I
DM
I
AS
E
AS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
= -4.5V (Note 6)
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.1mH (Note 7)
Avalanche Energy, L=0.1mH (Note 7)
Value
-20
±10
-12.7
-42
-3
-80
-35
64
Unit
V
V
A
A
A
A
mJ
ADVANCE INFORMATION
ADVANCE INFORMATION
NEW PRODUCT
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Symbol
P
D
R
JA
P
D
R
JA
R
JC
T
J,
T
STG
Value
0.9
136
2.3
54
4
-55 to +150
Unit
W
°
C/W
W
°
C/W
°
C
Steady State
Steady State
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
-20
—
—
-0.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
-0.7
3350
527
460
10.7
50
103
6.0
14.4
9.7
30
235
110
64
60
Max
—
-1
±100
-1.2
9.5
12.5
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
Test Condition
V
GS
= 0V, I
D
= -1mA
V
DS
= -16V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -4.5V, I
D
= -3.6A
V
GS
= -2.5V, I
D
= -3.6A
V
GS
= 0V, I
S
= -10A
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DS
= -10V, I
D
= -3.6A
nA
V
mΩ
V
pF
Ω
nC
ns
V
DD
= -10V,
V
GS
= -4.5V,
R
GEN
= 4.7Ω, I
D
= -3.6A
ns
nC
I
F
= -3.6A, di/dt = 100A/µs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°
C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
DMP2010UFG
Document number: DS37848 Rev. 2 - 2
2 of 7
www.diodes.com
September 2015
© Diodes Incorporated
DMP2010UFG
30.0
V
GS
= -2.0V
25.0
25
I
D
, DRAIN CURRENT (A)
V
GS
= -2.5V
20.0
V
GS
= -3.0V
V
GS
= -4.0V
15.0
V
GS
= -4.5V
10.0
V
GS
= -1.5V
V
GS
= -1.2V
0.0
0
0.5
1
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
2
30
V
DS
= -5V
ADVANCE INFORMATION
ADVANCE INFORMATION
NEW PRODUCT
I
D
, DRAIN CURRENT (A)
20
15
10
125℃
5
150℃
0
0
0.5
1
1.5
2
2.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
85℃
25℃
-55℃
5.0
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(Ω)
0.015
0.02
0.018
0.016
0.014
0.012
0.01
0.008
0.006
0.004
0.002
0
I
D
= -3.6A
0.012
V
GS
= -2.5V
0.009
V
GS
= -4.5V
0.006
0.003
0
5
10
15
20
25
30
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0
0
2
4
6
8
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
10
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(Ω)
V
GS
= -4.5V
0.012
85℃
0.009
25℃
0.006
-55℃
125℃
150℃
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
0.015
2.5
2
V
GS
= -4.5V, I
D
= -5A
1.5
1
V
GS
= -2.5V, I
D
= -5A
0.003
0.5
0
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
POWERDI is a registered trademark of Diodes Incorporated.
0
0
5
-50
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
-25
DMP2010UFG
Document number: DS37848 Rev. 2 - 2
3 of 7
www.diodes.com
September 2015
© Diodes Incorporated
DMP2010UFG
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
0.02
1.2
1
I
D
= -1mA
0.8
I
D
= -250μA
0.015
V
GS
= -2.5V, I
D
= -5A
0.01
ADVANCE INFORMATION
ADVANCE INFORMATION
NEW PRODUCT
0.6
0.005
V
GS
= -4.5V, I
D
= -5A
0.4
0.2
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
150℃
I
DSS
, LEAKAGE CURRENT (nA)
30
100000
25
I
S
, SOURCE CURRENT (A)
V
GS
=0V, T
J
=125℃
V
GS
=0V, T
J
=150℃
V
GS
=0V, T
J
=85℃
V
GS
=0V, T
J
=25℃
5
V
GS
=0V, T
J
=-55℃
0
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1.5
10000
125℃
20
1000
85℃
15
100
25℃
10
10
1
0.1
5
10
15
20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Drain-Source Leakage Current vs.
Voltage
10
f=1MHz
0
10000
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
8
1000
C
oss
C
rss
V
GS
(V)
6
4
V
DS
= -10V, I
D
= -3.6A
2
100
0
5
10
15
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Typical Junction Capacitance
20
0
0
10
20
30
50 60 70 80
Q
g
(nC)
Figure 12. Gate Charge
40
90 100
POWERDI is a registered trademark of Diodes Incorporated.
DMP2010UFG
Document number: DS37848 Rev. 2 - 2
4 of 7
www.diodes.com
September 2015
© Diodes Incorporated
DMP2010UFG
100
R
DS(ON)
Limited
P
W
=100μs
ADVANCE INFORMATION
ADVANCE INFORMATION
NEW PRODUCT
I
D
, DRAIN CURRENT (A)
10
1
P
W
=1ms
P
W
=10ms
P
W
=100ms
0.1
0.01
T
J(MAX)
=150℃
T
C
=25℃
Single Pulse
DUT on 1*MRP board
V
GS
= -4.5V
0.01
0.1
P
W
=1s
P
W
=10s
DC
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 13. SOA, Safe Operation Area
1
r(t), TRANSIENT THERMAL RESISTANCE
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.7
D=0.02
0.01
D=0.01
D=0.005
D=Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 14. Transient Thermal Resistance
R
θJA
(t)=r(t) * R
θJA
R
θJA
=136℃/W
Duty Cycle, D=t1 / t2
POWERDI is a registered trademark of Diodes Incorporated.
DMP2010UFG
Document number: DS37848 Rev. 2 - 2
5 of 7
www.diodes.com
September 2015
© Diodes Incorporated
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