FDS6680A_Q datasheet, PDF - EEWORLD Datasheet

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FDS6680A_Q: DescriptionMOSFET SO-8 SGL N-CH 30V; Categorysemiconductor Discrete semiconductor; File Size165KB，5 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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FDS6680A_Q Overview

MOSFET SO-8 SGL N-CH 30V

FDS6680A_Q Parametric

Parameter Name	Attribute value
Product Category	MOSFET
Manufacturer	Fairchild
RoHS	No
Technology	Si
Mounting Style	SMD/SMT
Package / Case	SO-8
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	12.5 A
Rds On - Drain-Source Resistance	9.5 mOhms
Vgs - Gate-Source Voltage	20 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single Quad Drain Triple Source
Channel Mode	Enhancement
Packaging	Reel
Packaging	MouseReel
Packaging	Cut Tape
Fall Time	15 ns
Forward Transconductance - Min	64 S
Height	1.75 mm
Length	4.9 mm
Pd - Power Dissipation	2.5 W
Rise Time	5 ns
Factory Pack Quantity	2500
Transistor Type	1 N-Channel
Type	MOSFET
Typical Turn-Off Delay Time	27 ns
Typical Turn-On Delay Time	10 ns
Width	3.9 mm
Unit Weight	0.006596 oz

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FDS6680A

November 2004

July 2012

FDS6680A

Single N-Channel, Logic Level, PowerTrench

MOSFET

General Description

This N-Channel Logic Level MOSFET is produced

using Fairchild Semiconductor’s advanced Power

Trench process that has been especially tailored to

minimize the on-state resistance and yet maintain

superior switching performance.

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

Features

•

12.5 A, 30 V

DS(ON)

= 9.5 mΩ @ V

= 10 V

DS(ON)

= 13 mΩ @ V

= 4.5 V

•

Ultra-low gate charge

•

High performance trench technology for extremely

low R

DS(ON)

•

High power and current handling capability

SO-8

Pin 1

SO-8

=25 C unless otherwise noted

Absolute Maximum Ratings

Symbol

DSS

GSS

Drain-Source Voltage

Gate-Source Voltage

Drain Current

– Continuous

– Pulsed

Parameter

Ratings

±20

(Note 1a)

Units

12.5

2.5

1.2

1.0

–55 to +150

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

, T

STG

Operating and Storage Junction Temperature Range

°C

Thermal Characteristics

θJA

θJC

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

°C/W

Package Marking and Ordering Information

Device Marking

FDS6680A

Device

FDS6680A

Reel Size

13’’

Tape width

12mm

Quantity

2500 units

Fairchild Semiconductor Corporation

FDS6680A Rev F2(W)

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The clock used to drive the flip-flop flash circuit

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