BD241A datasheet, PDF - EEWORLD Datasheet

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BD241A: DescriptionBipolar Transistors - BJT NPN General Purpose; CategoryDiscrete semiconductor The transistor; File Size237KB，9 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/; Environmental Compliance

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Bipolar Transistors - BJT NPN General Purpose

BD241A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	STMicroelectronics
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power consumption environment	40 W
Maximum power dissipation(Abs)	40 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	3 MHz
VCEsat-Max	1.2 V

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BD241A

BD241C

NPN power transistors

Features

■

NPN transistors

Applications

■

Audio, general purpose switching and amplifier

transistors

Description

The devices are manufactured in Planar

technology with “Base Island” layout. The

resulting transistor shows exceptional high gain

performance coupled with very low saturation

voltage. The PNP types are BD242A and

BD242C.

TO-220

Figure 1.

Internal schematic diagram

Table 1.

Device summary

Marking

BD241A

BD241C

Package

TO-220

Packaging

Tube

Order codes

BD241A

BD241C

July 2007

Rev 2

1/9

www.st.com

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