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NE68133

Description
RF Bipolar Transistors
Categorysemiconductor    Discrete semiconductor   
File Size985KB,20 Pages
ManufacturerCEL
Websitehttp://www.cel.com/
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RF Bipolar Transistors

NE68133 Parametric

Parameter NameAttribute value
Product CategoryRF Bipolar Transistors
ManufacturerCEL
RoHSNo
Transistor TypeBipolar
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO1.5 V
Continuous Collector Current0.065 A
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Collector- Base Voltage VCBO20 V
DC Current Gain hFE Max50 at 7 mA at 3 V
Operating Frequency9000 MHz (Typ)
Pd - Power Dissipation200 mW
TypeRF Bipolar Small Signal
NPN SILICON HIGH
FREQUENCY TRANSISTOR
• LOW NOISE FIGURE:
1.2 dB at 1 GHz
1.6 dB at 2 GHz
• HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 8 GHz
NE681 SERIES
SILICON TRANSISTOR
FEATURES
• HIGH ASSOCIATED GAIN:
15 dB at 1 GHz
12 dB at 2 GHz
• LOW COST
Minimum Noise Figure, NF min (dB)
V
CE
= 3 V, I
C
= 5 mA
MSG
20
3.0
MAG
10
Associated Gain, Maximum Stable Gain
and Maximum Available Gain,
GA, MSG, MAG (dB)
ers
mb ot
T E: a r t n u e n
NO g p
ar
gn.
E
et
AS
in
esi
LE
ow tashe ew d
P
oll
n
f
a
for
DESCRIPTION
he thi s d
for ffice
T
ed
om mend ales o
fr
om call s
rec se
le a ls:
P
tai 35
de 81
E6
9R
N
8 13
E6
N
E
B
00 (CHIP)
35 (MICRO-X)
The NE681 series of NPN epitaxial silicon transistors are
designed for low noise, high gain, low cost amplifier applica-
tions. Both the chip and micro-x versions are suitable for
amplifier applications up to 4 GHz. The NE681 die is also
available in six different low cost plastic surface mount pack-
age styles. NE681's unique device characteristics allow you to
use a single matching point to simultaneously achieve both low
noise and high gain.
18 (SOT 343 STYLE)
19 (3 PIN ULTRA
SUPER MINI MOLD)
NOISE FIGURE, GAIN MSG
AND MAG vs. FREQUENCY
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
2.0
NF
G
A
0
1.0
0.5
1.0
2.0
3.0
Frequency, f (GHz)
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Date Published: June 28, 2005

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NE68133
Description RF Bipolar Transistors
Product Category RF Bipolar Transistors
Manufacturer CEL
RoHS No
Transistor Type Bipolar
Technology Si
Transistor Polarity NPN
Emitter- Base Voltage VEBO 1.5 V
Continuous Collector Current 0.065 A
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Configuration Single
Collector- Base Voltage VCBO 20 V
DC Current Gain hFE Max 50 at 7 mA at 3 V
Operating Frequency 9000 MHz (Typ)
Pd - Power Dissipation 200 mW
Type RF Bipolar Small Signal
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