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BC848CWT1G

Description
RF Connectors / Coaxial Connectors R/A PCB Skt
CategoryDiscrete semiconductor    The transistor   
File Size104KB,13 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BC848CWT1G Overview

RF Connectors / Coaxial Connectors R/A PCB Skt

BC848CWT1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
Parts packaging codeSC-70
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging code419-04
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)420
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
BC846, BC847, BC848
General Purpose
Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 which is
designed for low power surface mount applications.
Features
www.onsemi.com
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BC846
BC847
BC848
Collector-Base Voltage
BC846
BC847
BC848
Emitter-Base Voltage
BC846
BC847
BC848
Collector Current − Continuous
I
C
V
EBO
6.0
6.0
5.0
100
mAdc
V
CBO
80
50
30
V
Symbol
V
CEO
65
45
30
V
Value
Unit
V
3
COLLECTOR
3
1
BASE
2
EMITTER
1
2
SC−70/SOT−323
CASE 419
STYLE 3
MARKING DIAGRAM
XX MG
G
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1) T
A
= 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
1. FR−5 = 1.0 x 0.75 x 0.062 in.
Symbol
P
D
R
qJA
T
J
, T
stg
Max
200
620
−55 to
+150
Unit
mW
°C/W
°C
XX
= Specific Device Code
M
= Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 12 of this data sheet.
©
Semiconductor Components Industries, LLC, 2015
1
April, 2015 − Rev. 12
Publication Order Number:
BC846AWT1/D
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