ZXM62P02E6
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
ADVANCE INFORMATION
BV
DSS
-20V
R
DS(ON)
200mΩ @ V
GS
= -4.5V
I
D
T
A
= +25°
C
-2.3A
Features and Benefits
Low On-resistance
Fast Switching Speed
Low Threshold
Low Gate Drive
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free.“Green” Device (Note 3)
Description
This new generation of high density MOSFETs from Zetex utilizes a
unique structure that combines the benefits of low on-resistance with
fast switching speed. This makes them ideal for high efficiency, low
voltage, power management applications.
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram Below
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.018 grams (Approximate)
Applications
•
DC - DC Converters
•
Power Management Functions
•
Disconnect Switches
•
Motor Control
SOT26
D
D
G
Top View
Pin Out
Top View
D
D
S
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
ZXM62P02E6TA
ZXM62P02E6TC
Notes:
Reel Size (inch)
7
13
Tape Width (mm)
8
8
Quantity Per Reel
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
2P02 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
Date Code Key
Year
2015
Code
C
Month
Code
Jan
1
2016
D
Feb
2
2017
E
Mar
3
2018
F
Apr
4
2019
G
May
5
2020
H
Jun
6
2021
I
Jul
7
2022
J
Aug
8
2023
K
Sep
9
2024
L
Oct
O
2025
M
Nov
N
2026
N
Dec
D
ZXM62P02E6
Document Number DS33482 Rev. 2 - 2
1 of 7
www.diodes.com
March 2015
© Diodes Incorporated
ZXM62P02E6
Absolute Maximum Ratings
Characteristic
Drain-Source Voltage
Symbol
V
DSS
V
GSS
V
GS
= -4.5V
T
A
= +25° (Note 6)
C
T
A
= +70° (Note 6)
C
(Note 7)
(Note 6)
(Note 7)
(Note 5)
(Note 6)
I
D
I
DM
I
S
I
SM
P
D
P
D
T
J
, T
STG
Value
-20
12
-2.3
-1.7
-13
-1.9
-13
1.1
8.8
1.7
13.7
-55 to +150
Unit
V
V
A
A
A
A
W
mW/C
W
mW/C
C
ADVANCE INFORMATION
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation
at T
A
= +25°
C
Linear Derating Factor
Power Dissipation at
T
A
= +25°
C
Linear Derating Factor
Operating and Storage Temperature Range
Thermal Resistance
Characteristic
Junction to Ambient
(Note 5)
(Note 6)
Symbol
R
θJA
Value
113
73
Unit
C/W
Electrical Characteristics
(@T
A
= +25° unless otherwise stated.)
C,
Characteristic
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Note 10)
DYNAMIC
(Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
(Notes 9 and10
)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
SOURCE-DRAIN DIODE
Diode Forward Voltage (Note 8)
Reverse recovery time (Note 10)
Reverse recovery charge (Note 10)
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
Min
-20
-0.7
1.5
Typ
320
150
75
4.1
15.4
12.0
19.2
Max
-1
100
0.2
0.375
5.8
1.25
2.8
Unit
V
µA
nA
V
Ω
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Test Condition
I
D
= -250µA, V
GS
= 0V
V
DS
= -20V, V
GS
= 0V
V
GS
=
12V,
V
DS
= 0V
I
D
= -250µA, V
DS
= V
GS
V
GS
= -4.5V, I
D
= -1.6A
V
GS
= -2.7V, I
D
= -0.8A
V
DS
= -10V, I
D
= -0.8A
V
DS
= -15V, V
GS
= 0V
f = 1MHz
V
DS
= -16V, V
GS
= -4.5V
I
D
= -1.6A
(Refer to test circuit)
V
DD
= -10V, I
D
= -1.6A, R
G
= 6Ω,
R
D
= 6.1Ω
(Refer to test circuit)
V
SD
t
RR
Q
RR
22.5
10.4
-0.95
V
ns
nC
T
J
= +25° I
S
=-1.6A,
C,
V
GS
=0V
T
J
= +25° I
F
=-1.6A,
C,
di/dt= 100A/µs
5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR-4 PCB measured at t
5 secs.
7. Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
8. Measured under pulsed conditions. Width= 300µs; duty cycle
2%.
9. Switching characteristics are independent of operating junction temperatures.
10. For design aid only, not subject to production testing.
ZXM62P02E6
Document Number DS33482 Rev. 2 - 2
2 of 7
www.diodes.com
March 2015
© Diodes Incorporated
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