CMST5088-BK datasheet, PDF - EEWORLD Datasheet

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CMST5088-BK: DescriptionBipolar Transistors - BJT NPN 35Vcbo 30Vceo 4.5Vebo 50mA 275mW; Categorysemiconductor Discrete semiconductor; File Size473KB，3 Pages; ManufacturerCentral Semiconductor

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Bipolar Transistors - BJT NPN 35Vcbo 30Vceo 4.5Vebo 50mA 275mW

CMST5088-BK Parametric

Parameter Name	Attribute value
Product Category	Bipolar Transistors - BJT
Manufacturer	Central Semiconductor
RoHS	Details
Technology	Si
Mounting Style	SMD/SMT
Package / Case	SOT-323-3
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	30 V
Collector- Base Voltage VCBO	35 V
Emitter- Base Voltage VEBO	4.5 V
Collector-Emitter Saturation Voltage	500 mV
Maximum DC Collector Current	50 mA
Gain Bandwidth Product fT	50 MHz
Maximum Operating Temperature	+ 150 C
Continuous Collector Current	50 mA
DC Collector/Base Gain hfe Min	350
DC Current Gain hFE Max	900
Minimum Operating Temperature	- 65 C
Packaging	Bulk
Pd - Power Dissipation	275 mW
Factory Pack Quantity	5000
Unit Weight	0.000176 oz

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CMST5088

CMST5089

SURFACE MOUNT

NPN SILICON TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMST5088,

CMST5089 types are NPN silicon transistors

manufactured by the epitaxial planar process, epoxy

molded in a SUPERmini™ surface mount package,

designed for applications requiring high gain and low

noise.

MARKING CODES: CMST5088: 1QC

CMST5089: 1RC

SOT-323 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg

CMST5088

4.5

275

-65 to +150

455

CMST5089

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

CMST5088

SYMBOL

TEST CONDITIONS

MIN

MAX

ICBO

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

hFE

Cob

Cib

hfe

VCB=20V

VCB=15V

VEB=3.0V

VEB=4.5V

IC=100μA

IC=1.0mA

IE=100μA

IC=10mA, IB=1.0mA

VCE=5.0V, IC=0.1mA

VCE=5.0V, IC=1.0mA

VCE=5.0V, IC=10mA

VCE=5.0V, IC=500μA, f=20MHz

VCB=5.0V, IE=0, f=1.0MHz

VBE=0.5V, IC=0, f=1.0MHz

VCE=5.0V, IC=1.0mA, f=1.0kHz

VCE=5.0V, IC=100μA, RS=10kΩ

f=10Hz to 15.7kHz

4.5

300

350

300

350

0.5

0.8

900

4.0

1400

3.0

CMST5089

MIN

MAX

4.5

400

450

400

450

100

0.5

0.8

1200

4.0

1800

2.0

UNITS

MHz

R4 (9-February 2010)

CMST5088-BK Related Products

	CMST5088-BK	CMST5088-TR
Description	Bipolar Transistors - BJT NPN 35Vcbo 30Vceo 4.5Vebo 50mA 275mW	Bipolar Transistors - BJT NPN 35Vcbo 30Vceo 4.5Vebo 50mA 275mW
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT
Manufacturer	Central Semiconductor	Central Semiconductor
RoHS	Details	Details
Technology	Si	Si
Mounting Style	SMD/SMT	SMD/SMT
Package / Case	SOT-323-3	SOT-323-3
Transistor Polarity	NPN	NPN
Configuration	Single	Single
Collector- Emitter Voltage VCEO Max	30 V	30 V
Collector- Base Voltage VCBO	35 V	35 V
Emitter- Base Voltage VEBO	4.5 V	4.5 V
Collector-Emitter Saturation Voltage	500 mV	500 mV
Maximum DC Collector Current	50 mA	50 mA
Gain Bandwidth Product fT	50 MHz	50 MHz
Maximum Operating Temperature	+ 150 C	+ 150 C
Continuous Collector Current	50 mA	50 mA
DC Collector/Base Gain hfe Min	350	350
DC Current Gain hFE Max	900	900
Minimum Operating Temperature	- 65 C	- 65 C
Packaging	Bulk	Reel
Pd - Power Dissipation	275 mW	275 mW
Factory Pack Quantity	5000	3000
Unit Weight	0.000176 oz	0.000176 oz

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