BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
Rev. 08 — 26 October 2005
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS avionics power transistor for transmitter applications at frequencies from
1030 MHz to 1090 MHz.
Table 1:
Typical performance
RF performance at T
h
= 25
°
C in a common source class-AB test circuit; I
Dq
= 150 mA; typical
values.
Mode of operation
Pulsed class-AB:
1030 MHz to 1090 MHz
Conditions
t
p
= 50
µs; δ
= 2 %
t
p
= 128
µs; δ
= 2 %
t
p
= 340
µs; δ
= 1 %
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
V
DS
(V)
36
36
36
P
L
(W)
200
250
250
G
p
(dB)
15
14
14
η
D
(%)
50
50
50
t
r
(ns)
35
35
35
t
f
(ns)
6
6
6
1.2 Features
s
Typical pulsed class-AB performance at a frequencies from 1030 MHz to 1090 MHz, a
supply voltage of 36 V and an I
Dq
of 150 mA:
x
Load power
≥
200 W
x
Gain
≥
13 dB
x
Efficiency
≥
45 %
x
Rise time
≤
50 ns
x
Fall time
≤
50 ns
s
High power gain
s
Easy power control
s
Excellent ruggedness
s
Source on mounting flange eliminates DC isolators, reducing common mode
inductance
1.3 Applications
s
Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range.
Philips Semiconductors
BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
2. Pinning information
Table 2:
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Symbol
BLA1011-200 (SOT502A)
1
3
2
2
3
sym039
1
BLA1011S-200 (SOT502B)
1
2
3
drain
gate
source
[1]
1
3
2
2
1
3
sym039
[1]
Connected to flange
3. Ordering information
Table 3:
Ordering information
Package
Name
BLA1011-200
BLA1011S-200
-
-
Description
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502A
SOT502B
Type number
4. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
P
tot
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
total power dissipation
storage temperature
junction temperature
T
h
≤
25
°C;
t
p
= 50
µs; δ
= 2 %
Conditions
Min
-
-
-
−65
-
Max
75
±22
700
+150
200
Unit
V
V
W
°C
°C
9397 750 14634
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 — 26 October 2005
2 of 13
Philips Semiconductors
BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
5. Thermal characteristics
Table 5:
Symbol
Z
th(j-h)
[1]
Thermal characteristics
Parameter
Conditions
[1]
Typ
0.15
Unit
K/W
thermal impedance from junction to heatsink T
h
= 25
°C
Thermal resistance is determined under RF operating conditions; t
p
= 50
µs, δ
= 10 %.
6. Characteristics
Table 6:
Characteristics
T
j
= 25
°
C unless otherwise specified
Symbol Parameter
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
transfer conductance
Conditions
V
DS
= 10 V; I
D
= 300 mA
V
GS
= 0 V; V
DS
= 36 V
V
GS
= V
GS(th)
+ 9 V;
V
DS
= 10 V
V
GS
=
±20
V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 10 A
Min
75
4
-
45
-
-
-
Typ
-
-
-
-
-
9
60
Max Unit
-
5
1
-
1
-
-
V
V
µA
A
µA
S
mΩ
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 3 mA
drain-source on-state resistance V
GS
= 9 V; I
D
= 10 A
7. Application information
Table 7:
Application information
RF performance in a common source pulsed class-AB circuit; (t
p
= 50
µ
s;
δ
= 2 %); f = 1030 MHz
and 1090 MHz; T
h
= 25
°
C; Z
th(mb-h)
= 0.15 K/W; I
Dq
= 150 mA; unless otherwise specified.
Symbol
V
DS
P
L
G
p
η
D
t
r
t
f
Parameter
drain-source voltage
load power
power gain
drain efficiency
rise time
fall time
t
p
= 50
µs; δ
= 2 %
P
L
= 200 W
t
p
= 50
µs; δ
= 2 %
Conditions
Min
-
-
13
45
-
-
Typ
36
200
-
-
-
-
50
50
Max
-
Unit
V
W
dB
%
ns
ns
7.1 Ruggedness in class-AB operation
The BLA1011-200 and BLA1011S-200 are capable of withstanding a load mismatch
corresponding to VSWR = 5 : 1 through all phases under the following conditions:
V
DS
= 36 V; f = 1030 MHz to 1090 MHz at rated load power.
9397 750 14634
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 — 26 October 2005
3 of 13
Philips Semiconductors
BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
20
G
p
(dB)
15
mgw033
80
η
D
(%)
60
250
P
L
(W)
200
mgw034
G
p
150
10
η
D
40
100
5
20
50
0
0
50
100
150
0
200
250
P
L
(W)
0
0
2
4
6
P
D
(W)
8
V
DS
= 36 V; I
Dq
= 150 mA; f = 1060 MHz; t
p
= 50
µs;
δ
=2%
V
DS
= 36 V; I
Dq
= 150 mA; f = 1060 MHz; t
p
= 50
µs;
δ
=2%
Fig 1. Power gain and drain efficiency as functions of
load power; typical values
mgw035
Fig 2. Load power as a function of drive power;
typical values
250
P
L
(W)
200
mgw036
20
G
p
(dB)
16
150 mA
I
Dq
= 1.5 A
20
G
p
(dB)
16
G
p
12
150
12
8
100
P
L
8
4
50
4
0
0
50
100
150
200
250
P
L
(W)
0
0
1
2
3
4
V
GS
(V)
5
0
V
DS
= 36 V; f = 1060 MHz; t
p
= 50
µs; δ
= 2 %
V
DS
= 36 V; I
Dq
= 150 mA; P
i
= 5.5 W; f = 1060 MHz;
t
p
= 50
µs; δ
= 2 %
Fig 3. Power gain as a function of load power; typical
values
Fig 4. Load power and power gain as functions of
gate-source voltage; typical values
9397 750 14634
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 — 26 October 2005
4 of 13
Philips Semiconductors
BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
20
G
p
(dB)
15
mgw037
80
η
D
(%)
60
5
Z
i
(W)
4
r
i
x
i
mgw038
G
p
η
D
10
40
3
2
5
20
1
0
1020
1040
1060
1080
0
1100
f (MHz)
0
1020
1040
1060
1080
1100
f (MHz)
V
DS
= 36 V; I
Dq
= 150 mA; P
L
= 200 W; t
p
= 50
µs;
δ
=2%
V
DS
= 36 V; I
Dq
= 150 mA; P
L
= 200 W; t
p
= 50
µs;
δ
=2%
Fig 5. Power gain and drain efficiency a functions of
frequency; typical values
Fig 6. Input Impedance as a function of frequency
(series components); typical values
mgw039
4
Z
L
(W)
2
R
L
0
X
L
−2
−4
1020
1040
1060
1080
1100
f (MHz)
V
DS
= 36 V; I
Dq
= 150 mA; P
L
= 200 W; t
p
= 50
µs; δ
= 2 %
Fig 7. Load impedance as a function of frequency (series components); typical values
9397 750 14634
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 — 26 October 2005
5 of 13
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