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FDY300NZ Single N-Channel 2.5V Specified PowerTrench
FDY300NZ Single N-Channel 2.5V Specified PowerTrench
®
MOSFET
Electrical Characteristics
Symbol
BV
DSS
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage,
Test Conditions
V
GS
= 0 V,
I
D
= 250
µA
Min
20
Typ
Max
Units
V
Off Characteristics
∆BV
DSS
∆T
J
I
DSS
I
GSS
I
D
= 250
µA,
Referenced to 25°C
15
mV/°C
V
DS
= 16 V,
V
GS
= 0 V
V
GS
=
±
12 V, V
DS
= 0 V
V
GS
=
±
4.5 V, V
DS
= 0 V
1
±
10
±
1
µA
µA
µA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
0.6
1.0
3
1.3
V
mV/°C
g
FS
Forward Transconductance
V
GS
= 4.5 V,
I
D
= 600 mA
V
GS
= 2.5 V,
I
D
= 500 mA
I
D
= 150 mA
V
GS
= 1.8 V,
V
GS
= 4.5 V, I
D
=600mA, T
J
= 125°C
V
DS
= 5 V,
I
D
= 600 mA
0.24
0.36
0.70
0.35
1.8
0.70
0.85
1.25
1.00
Ω
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
V
DS
= 10 V,
f = 1.0 MHz
V
GS
= 0 V,
60
pF
20
pF
C
rss
Reverse Transfer Capacitance
(Note 2)
10
pF
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
V
DD
= 10 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
Ω
6
12
ns
8
16
ns
t
d(off)
Turn–Off Delay Time
8
16
ns
t
f
Turn–Off Fall Time
2.4
4.8
ns
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
V
DS
= 10 V,
V
GS
= 4.5 V
I
D
= 600 mA,
0.8
1.1
nC
0.16
nC
Q
gd
Gate–Drain Charge
0.26
nC
Drain–Source Diode Characteristics and Maximum Ratings
V
SD
t
rr
Q
rr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V,
I
S
= 150 mA
(Note 2)
0.7
1.2
V
I
F
= 600 mA,
dI
F
/dt = 100 A/µs
8
1
nS
nC
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a)
200°C/W when
mounted on a 1in
2
pad
of 2 oz copper
b) 280°C/W when mounted on a
minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs,
Duty Cycle < 2.0%
3. The diode connected between the gate
and source serves only as protection
againts ESD. No gate overvoltage
rating is implied.
FDY300NZ Rev
B
www.fairchildsemi.com
FDY300NZ Single N-Channel 2.5V Specified PowerTrench
®
MOSFET
Typical Characteristics
1
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 4.5V
3.5V
I
D
, DRAIN CURRENT (A)
0.8
2.6
3.0V
2.5V
2.4
2.2
2
1.8
1.6
V
GS
= 2.0V
2.0V
0.6
0.4
2.5V
1.4
1.2
1
0.8
3.0V
3.5V
0.2
4.5V
0
0
0.25
0.5
0.75
1
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.9
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 600mA
V
GS
= 4.5V
1.4
I
D
= 300mA
0.8
0.7
0.6
T
A
= 125
o
C
1.2
1
0.5
0.4
0.3
0.2
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.8
T
A
= 25
o
C
0.6
-50
-25
0
25
50
75
100
o
125
150
T
J
, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
1.5
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
1
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
1.2
T
A
= -55
o
C
25
o
C
V
GS
= 0V
0.1
125
o
C
0.9
T
A
= 125
o
C
0.01
25
o
C
0.6
-55
o
C
0.001
0.3
0
0.5
1
1.5
2
2.5
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDY300NZ Rev
B
www.fairchildsemi.com
FDY300NZ Single N-Channel 2.5V Specified PowerTrench
®
MOSFET
Typical Characteristics
5
100
I
D
= 600mA
V
GS
, GATE-SOURCE VOLTAGE (V)
90
80
CAPACITANCE (pF)
f = 1MHz
V
GS
= 0 V
C
iss
4
V
DS
= 5V
10V
3
70
60
50
40
30
20
10
15V
2
C
oss
1
C
rss
0
4
8
12
16
20
0
0
0.2
0.4
0.6
0.8
1
Q
g
, GATE CHARGE (nC)
0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
10
P(pk), PEAK TRANSIENT POWER (W)
Figure 8. Capacitance Characteristics.
30
25
20
15
10
5
0
0.0001
I
D
, DRAIN CURRENT (A)
SINGLE PULSE
R
θ
JA
= 280°
C/W
C
T
A
= 25°
1
R
DS(ON)
LIMIT
1ms
10ms
100ms
10s
1s
0.1
DC
V
GS
= 4.5V
SINGLE PULSE
R
θ
JA
= 280
o
C/W
T
A
= 25
o
C
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
R
θJA
(t) = r(t) * R
θJA
R
θJA
=280 °
C/W
0.1
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
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