DG411L, DG412L, DG413L
Vishay Siliconix
Precision Monolithic Quad SPST
Low-Voltage CMOS Analog Switches
DESCRIPTION
The DG411L, DG412L, DG413L are low voltage pin-for-pin
compatible companion devices to the industry standard
DG411, DG412, DG413 with improved performance.
Using BiCMOS wafer fabrication technology allows the
DG411L, DG412L, DG413L to operate on single and dual
supplies. Single supply voltage ranges from 3 to 12 V while
dual supply operation is recommended with ± 3 to ± 6 V.
Combining high speed (t
ON
: 19 ns), flat R
DS(on)
over the
analog signal range (5
),
minimal insertion lose (- 3 dB at
280 MHz), and excellent crosstalk and off-isolation
performance (- 50 dB at 50 MHz), the DG411L, DG412L,
DG413L are ideally suited for audio and video signal
switching.
The DG411L and DG412L respond to opposite control logic
as shown in the Truth Table. The DG413L has two normally
open and two normally closed switches.
FEATURES
• 2.7- thru 12 V single supply or
± 3- thru ± 6 dual supply
• On-resistance - R
DS(on)
: 17
• Fast switching - t
ON
: 19 ns
•
t
OFF
: 12 ns
• TTL, CMOS compatible
• Low leakage: 0.25 nA
• 2000 V ESD protection
Available
RoHS*
COMPLIANT
BENEFITS
•
•
•
•
Widest dynamic range
Low signal errors and distortion
Break-before-make switching action
Simple interfacinge
APPLICATIONS
•
•
•
•
•
•
•
Precision automatic test equipment
Precision data acquisition
Communication systems
Battery powered systems
Computer peripherals
SDSL, DSLAM
Audio and video signal routing
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG411L, DG412L
Dual-In-Line, TSSOP and SOIC
IN
1
D
1
S
1
V-
GND
S
4
D
4
IN
4
1
2
3
4
5
6
7
8
Top View
16
15
14
13
12
11
10
9
IN
2
D
2
S
2
V+
GND
V
L
S
3
D
3
IN
3
S
4
D
4
IN
4
6
7
8
Top View
11
10
9
5
12
V
L
S
3
D
3
IN
3
DG413L
Dual-In-Line, TSSOP and SOIC
IN
1
D
1
S
1
V-
1
2
3
4
16
15
14
13
IN
2
D
2
S
2
V+
TRUTH TABLE
Logic
0
1
Logic “0”
0.8 V
Logic “1”
2.4 V
DG411L
ON
OFF
DG412L
OFF
ON
TRUTH TABLE
Logic
0
1
Logic “0”
0.8 V
Logic “1”
2.4 V
SW
1
, SW
4
OFF
ON
SW
2
, SW
3
ON
OFF
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 71397
S11-0179-Rev. F, 07-Feb-11
www.vishay.com
1
DG411L, DG412L, DG413L
Vishay Siliconix
ORDERING INFORMATION
Temp. Range
DG411L, DG412L
DG411LDY
DG411LDY-E3
DG411LDY-T1
DG411LDY-T1-E3
16-Pin Narrow SOIC
DG412LDY
DG412LDY-E3
DG412LDY-T1
DG412LDY-T1-E3
- 40 °C to 85 °C
DG411LDQ
DG411LDQ-E3
DG411LDQ-T1
DG411LDQ-T1-E3
16-Pin TSSOP
DG412LDQ
DG412LDQ-E3
DG412LDQ-T1
DG412LDQ-T1-E3
DG413L
DG413LDY
DG413LDY-E3
DG413LDY-T1
DG413LDY-T1-E3
DG413LDQ
DG413LDQ-E3
DG413LDQ-T1
DG413LDQ-T1-E3
Package
Part Number
16-Pin Narrow SOIC
- 40 °C to 85 °C
16-Pin TSSOP
ABSOLUTE MAXIMUM RATINGS
Parameter
V+ to V-
GND to V-
V
L
I
Na
, V
S
, V
D
Continuous Current (Any terminal)
Peak Current, S or D (Pulsed 1 ms, 10 % duty cycle)
Storage Temperature
(DQ, DY Suffix)
(AK Suffix)
16-Pin TSSOP
c
Power Dissipation (Packages)
b
16-Pin SOIC
d
16-Pin CerDIP
e
Limit
- 0.3 to 13
7
(GND - 0.3) to (V+) + 0.3
- 0.3 to (V+) + 0.3
or 30 mA, whichever occurs first
30
100
- 65 to 125
- 65 to 150
450
650
900
mW
V
Unit
mA
°C
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 7 mW/°C above 75 °C
d. Derate 7.6 mW/°C above 75 °C
e. Derate 12 mW/°C above 75 °C.
www.vishay.com
2
Document Number: 71397
S11-0179-Rev. F, 07-Feb-11
DG411L, DG412L, DG413L
Vishay Siliconix
SPECIFICATIONS
a
(Single Supply 12 V)
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
A Suffix Limits D Suffix Limits
- 55 °C to 125 °C - 40 °C to 85 °C
Temp.
b
Full
V+ = 10.8 V, V- = 0 V
I
S
= 10 mA, V
D
= 2/9 V
V
D
= 1/11 V, V
S
= 11/1 V
I
D(off)
Channel On Leakage
Current
Digital Control
Input Current, V
IN
Low
Input Current, V
IN
High
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
e
Off-Isolation
e
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source On-Resistance
Symbol
V
ANALOG
R
DS(on)
I
S(off)
Typ.
c
Min.
d
0
Max.
d
12
30
45
Min.
d
0
Max.
d
12
30
40
Unit
V
Room
Full
Room
Full
Room
Full
Room
Full
Full
Full
Room
Full
Room
Full
Room
Room
Room
20
-1
- 15
-1
- 15
-1
- 15
0.01
- 1.5
- 1.5
20
12
6
5
71
95
5
6
15
0.02
- 0.002
0.002
- 0.002
-1
- 7.5
-1
- 7.5
Switch Off Leakage Current
1
15
1
15
1
15
1.5
1.5
50
70
30
48
-1
- 10
-1
- 10
-1
- 10
-1
-1
1
10
1
10
1
10
1
1
50
60
30
40
ns
nA
I
D(on)
V
S
= V
D
= 11/1 V
I
IL
I
IH
t
ON
t
OFF
t
D
Q
OIRR
X
TALK
C
S(off)
C
D(off)
e
V
IN
under test = 0.8 V
V
IN
under test = 2.4 V
µA
R
L
= 300
,
C
L
= 35 pF
V
S
= 5 V, see figure 2
DG413L only, V
S
= 5 V
R
L
= 300
,
C
L
= 35 pF
V
g
= 0 V, R
g
= 0
,
C
L
= 10 nF
R
L
= 50
,
C
L
= 5 pF , f = 1 MHz
pC
dB
Channel-to-Channel
Crosstalk
e
Source Off Capacitance
e
Drain Off
Capacitance
e
Channel-On Capacitance
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
Room
Room
f = 1 MHz
Room
Room
Room
Full
pF
C
D(on)
I+
I-
V
IN
= 0 or 5 V
I
L
I
GND
1
7.5
-1
-5
1
7.5
-1
-5
1
5
µA
Room
Full
Room
Full
Room
Full
1
5
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
Document Number: 71397
S11-0179-Rev. F, 07-Feb-11
www.vishay.com
3
DG411L, DG412L, DG413L
Vishay Siliconix
SPECIFICATIONS
a
(Dual Supply ± 5 V)
Test Conditions
Unless Otherwise Specified
V+ = 5 V, V- = - 5 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
A Suffix Limits D Suffix Limits
- 55 °C to 125 °C - 40 °C to 85 °C
Temp.
b
Full
V+ = 5 V, V- = - 5 V
I
S
= 10 mA, V
D
= ± 3.5 V
V+ = 5.5 , V- = - 5.5 V
V
D
= ± 4.5 V, V
S
= ± 4.5 V
V+ = 5.5 V, V- = - 5.5 V
V
S
= V
D
= ± 4.5 V
V
IN
under test = 0.8 V
V
IN
under test = 2.4 V
Room
Full
Room
Full
Room
Full
Room
Full
Full
Full
Room
Full
Room
Full
Room
Room
Room
R
L
= 50
,
C
L
= 5 pF , f = 1 MHz
Room
Room
f = 1 MHz
Room
Room
Room
Full
V
IN
= 0 or 5 V
I
L
I
GND
Room
Full
Room
Full
Room
Full
0.05
0.05
21
16
6
5
68
85
9
9
20
0.03
- 0.002
0.002
- 0.002
-1
- 7.5
-1
- 7.5
1
7.5
-1
-5
1
7.5
-1
-5
1
5
1
5
µA
pF
dB
pC
20
-1
- 15
-1
- 15
-1
- 15
- 1.5
- 1.5
Ty.p
c
Min.
d
-5
Max.
d
5
33
45
1
15
1
15
1
15
1.5
1.5
50
70
35
50
-1
- 10
-1
- 10
-1
- 10
-1
-1
Min.
d
-5
Max.
d
5
33
40
1
10
1
10
1
10
1
1
50
60
35
40
ns
nA
Unit
V
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source On-Resistance
Switch Off
Leakage Current
g
Channel On
Leakage Current
g
Digital Control
Input Current, V
IN
Low
e
Input Current, V
IN
High
Turn-On Time
e
Turn-Off Time
e
Break-Before-Make Time
Delay
e
Charge Injection
e
Off Isolation
e
e
Symbol
V
ANALOG
R
DS(on)
I
S(off)
I
D(off)
I
D(on)
I
IL
I
IH
t
ON
t
OFF
t
D
Q
OIRR
X
TALK
C
S(off)
C
D(off)
e
µA
Dynamic Characteristics
R
L
= 300
,
C
L
= 35 pF
V
S
= ± 3.5 V, see figure 2
DG413L only, V
S
= 3.5 V
R
L
= 300
,
C
L
= 35 pF
V
g
= 0 V, R
g
= 0
,
C
L
= 10 nF
Channel-to-Channel
Crosstalk
e
Source Off Capacitance
e
Drain Off
Capacitance
e
Channel On Capacitance
Power Supplies
Positive Supply Current
e
Negative Supply Current
e
Logic Supply Current
Ground Current
e
e
C
D(on)
I+
I-
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
www.vishay.com
4
Document Number: 71397
S11-0179-Rev. F, 07-Feb-11
DG411L, DG412L, DG413L
Vishay Siliconix
SPECIFICATIONS
a
(Single Supply 5 V)
Test Conditions
Unless Otherwise Specified
V+ = 5 V, V- = 0 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
A Suffix Limits D Suffix Limits
- 55 °C to 125 °C - 40 °C to 85 °C
Temp.
b
Full
V+ = 4.5 V
I
S
= 5 mA, V
D
= 1 V, 3.5 V
Room
Full
Room
Hot
Room
Hot
Room
Room
Room
Hot
V
IN
= 0 or 5 V
I
L
I
GND
Room
Hot
Room
Hot
Room
Hot
35
Typ.
c
Min.
d
Max.
d
5
50
88
50
90
30
55
Min.
d
Max.
d
5
50
75
50
60
30
40
ns
Unit
V
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source On-Resistance
e
Dynamic Characteristics
Turn-On Time
e
Turn-Off Time
e
Break-Before-Make Time
Delay
e
Charge Injection
e
Power Supplies
Positive Supply Current
e
Negative Supply Current
e
Logic Supply Current
Ground Current
e
e
Symbol
V
ANALOG
R
DS(on)
t
ON
t
OFF
t
D
Q
27
15
6
0.5
0.02
- 0.002
0.002
- 0.002
-1
- 7.5
-1
- 7.5
R
L
= 300
,
C
L
= 35 pF
V
S
= 3.5 V, see figure 2
DG413L only, V
S
= 3.5 V
R
L
= 300
,
C
L
= 35 pF
V
g
= 0 V, R
g
= 0
,
C
L
= 10 nF
pC
1
7.5
-1
-5
1
7.5
-1
-5
1
5
1
5
µA
I+
I-
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
Document Number: 71397
S11-0179-Rev. F, 07-Feb-11
www.vishay.com
5
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