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FDT1600N10ALZ — N-Channel PowerTrench® MOSFET
November 2013
FDT1600N10ALZ
100 V, 5.6 A, 160 mΩ
Features
N-Channel PowerTrench
®
MOSFET
Description
This N-Channel MOSFET is produced using Fairchld Semicon-
ductor’s advanced PowerTrench
®
process that has been tai-
lored to minimize the on-state resistance and maintain superior
switching performance.
• R
DS(on)
= 121 mΩ (Typ.) @ V
GS
= 10 V, I
D
= 2.8 A
• R
DS(on)
= 156 mΩ (Typ.) @ V
GS
= 5 V, I
D
= 1.8 A
• Low Gate Charge (Typ. 2.9 nC)
• Low C
rss
(Typ. 2.04 pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Application
• Consumer Appliances
• LED TV and Monitor
• Synchronous Rectification
• Uninterruptible Power Supply
• Micro Solar Inverter
D
D
S
SOT-223
G
D
G
D
S
MOSFET Maximum Ratings
T
C
= 25 °C unless otherwise noted.
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25 °C)
- Derate Above 25 °C
- Continuous (T
C
= 25 °C)
- Continuous (T
C
= 100 °C)
- Pulsed
(Note 2)
(Note 3)
(Note 4)
Parameter
FDT1600N10ALZ
100
±20
5.6
3.5
11.2
9.2
6.0
10.42
0.083
-55 to +150
300
Unit
V
V
A
A
mJ
V/ns
W
°C
°C
°C
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering, 1/8’’ from Case for 5 Seconds
Maximum Continous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
SD
= 5.6A
V
GS
= 0 V, I
SD
= 5.6A, V
DD
= 50V,
dI
F
/dt = 100A/μs
-
-
-
-
-
-
-
-
34.1
32.7
5.6
11.2
1.3
-
-
A
A
V
ns
nC
NOTES:
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a)
60 °C/W when mounted on a
1 in
2
pad of 2-oz copper.
b) 118 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Repetitive rating: pulse-width limited by maximum junction temperature.
3. Starting T
J
= 25 °C, L = 3 mH, I
AS
= 2.47 A.
4. I
SD
≤
5.6 A, di/dt
≤
200 A/μs, V
DD
≤
BV
DSS
, starting T
J
= 25°C.
5. Essentially independent of operating temperature typical characteristics.
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