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BSO203P-H

Description
RF Connectors / Coaxial Connectors RP-SMA Fml Edge Mnt for 0.062" Thick Brd
Categorysemiconductor    Discrete semiconductor   
File Size313KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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RF Connectors / Coaxial Connectors RP-SMA Fml Edge Mnt for 0.062" Thick Brd

BSO203P-H Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerInfineon
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSO-8
Number of Channels2 Channel
Transistor PolarityP-Channel
Vds - Drain-Source Breakdown Voltage- 20 V
Id - Continuous Drain Current- 8.2 A
Rds On - Drain-Source Resistance21 mOhms
Vgs - Gate-Source Voltage12 V
Qg - Gate Charge- 26 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationDual
Channel ModeEnhancement
PackagingReel
Fall Time74 ns
Forward Transconductance - Min33 S
Height1.75 mm
Length4.9 mm
Moisture SensitiveYes
Pd - Power Dissipation2 W
Rise Time55 ns
Factory Pack Quantity2500
Transistor Type2 P-Channel
Typical Turn-Off Delay Time45 ns
Typical Turn-On Delay Time16 ns
Width3.9 mm
Unit Weight0.019048 oz
BSO203P H
OptiMOS
®
P-Power-Transistor
Features
• dual P-Channel in SO8
• Qualified according JEDEC for target applications
• 150°C operating temperature
• Super Logic Level (2.5V rated)
Product Summary
V
DS
R
DS(on),max
V
GS
=4.5 V
V
GS
=2.5 V
I
D
-20
21
34
-8.2
A
V
mΩ
• Pb-free plating; RoHS compliant, Halogen-free according to IEC61249-2-21
PG-DSO-8
Type
BSO203P H
Package
PG-DSO-8
Marking
203P
Lead free
Yes
Halogen free
Yes
Packing
dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
10 secs
Continuous drain current
1)
I
D
V
GS
=4.5 V,
T
A
=25 °C
V
GS
=4.5 V,
T
A
=70 °C
V
GS
=2.5 V,
T
A
=25 °C
V
GS
=2.5 V,
T
A
=70 °C
Pulsed drain current
2)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
1)
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
Rev.1.31
page 1
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
JESD22-A114 HBM
T
A
=25 °C
2.0
-55 ... 150
1B (500V - 1 kV)
260
55/150/56
2010-02-15
°C
T
A
=25 °C
I
D
=-8.2 A,
R
GS
=25
-8.2
-6.6
-6.5
-5.2
-32.8
97
±12
1.6
mJ
V
W
°C
Value
steady state
-7.0
-5.8
-5.7
-4.6
A
Unit
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