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1N4151-B

Description
Operational Amplifiers - Op Amps Dual JFET In Low N
CategoryDiscrete semiconductor    diode   
File Size11KB,1 Pages
ManufacturerRectron Semiconductor
Websitehttp://www.rectron.com/
Environmental Compliance
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1N4151-B Overview

Operational Amplifiers - Op Amps Dual JFET In Low N

1N4151-B Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)265
Maximum power dissipation0.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage75 V
Maximum reverse current0.05 µA
Maximum reverse recovery time0.002 µs
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1N4151
1N4151 SIGNAL DIODE
Absolute Maximum Ratings (Ta=25
°
C)
Items
Symbol Ratings Unit
Reverse Voltage
VR
50
V
Reverse Recovery
trr
2
ns
Time
Power Dissipation
P
500
mW
3.33mW/
°
C (25
°
C)
Forward Current
IF
300
mA
Junction Temp.
Tj
-65 to 175
°
C
Storage Temp.
Tstg -65 to 175
°
C
Mechanical Data
Items
Package
Case
Lead/Finish
Chip
Materials
DO-35
Hermetically sealed glass
Double stud/Solder Plating
Glass Passivated
26 MIN
Dimensions in millimeters
Dimensions (DO-35
)
DO-35
26 MIN
0.457
DIA.
0.559
4.2
max.
2.0
DIA.
max.
Electrical Characteristics (Ta=25
°
C)
Ratings
Breakdown Voltage
IR= 5.0uA
Peak Forward Surge Current PW= 1sec.
Maximum Forward Voltage
IF= 50mA
Maximum Reverse Current
VR= 50V
VR= 20V, Tj= 150
°
C
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Max Reverse Recovery Time
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100
Symbol
BV
IFsurge
VF
IR
Ratings
75
1.0
1.0
Unit
V
A
V
uA
0.050
50
Cj
2
trr
2
ns
pF
RECTRON USA
1315 John Reed Court, Industry, CA 91745
Tel: (626) 333-3802 Fax: (626) 330-6296
www.rectron.com

1N4151-B Related Products

1N4151-B 1N4151-T
Description Operational Amplifiers - Op Amps Dual JFET In Low N Diodes - General Purpose, Power, Switching Vr/75V Io/150mA T/R
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V
JEDEC-95 code DO-35 DO-35
JESD-30 code O-LALF-W2 O-LALF-W2
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 175 °C 175 °C
Minimum operating temperature -65 °C -65 °C
Package body material GLASS GLASS
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) 265 265
Maximum power dissipation 0.5 W 0.5 W
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 75 V 75 V
Maximum reverse current 0.05 µA 0.05 µA
Maximum reverse recovery time 0.002 µs 0.002 µs
surface mount NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form WIRE WIRE
Terminal location AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1
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