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DTC114YSA

Description
Bipolar Transistors - BJT Digital Transistor NPN
CategoryDiscrete semiconductor    The transistor   
File Size394KB,6 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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DTC114YSA Overview

Bipolar Transistors - BJT Digital Transistor NPN

DTC114YSA Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codeunknown
Other featuresBUILT IN BIAS RESISTANCE RATIO IS 4.7
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)68
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
DTC114 EM/EE/EUA/ECA/ESA
Taiwan Semiconductor
Small Signal Product
NPN Small Signal Transistor
FEATURES
- Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistor
(see equivalent circuit).
- The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
- Only the on/off conditions need to be set for
operation, marking device design easy.
- Packing code with suffix "G" means
green compound (halogen-free)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
SYMBOL
P
D
V
CC
V
IN
I
O
VALUE
EM
100
EE
150
EUA / ECA
200
50
50
Power Dissipation
Supply Voltage
Input Voltage
Output Current
Junction and Storage Temperature Range
Notes: 1. Valid provided that electrodes are kept at ambient temperature
PARAMETER
SYMBOL
V
I(on)
V
I(off)
I
I
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Document Number: DS_S1412029
No
DT t
Re
C1 c
14 om
EE me
/EU nd
ed
A/
EC
A
Equivalent Circuit
ESA
300
-10
½
+40
100
I
C(MAX)
T
J
, T
STG
-55 to + 150
MIN
-
-
-
-
0.5
TYP
-
-
-
-
MAX
3
-
CONDITION
V
CC
=5V,I
O
=100μA
I
O
/I
I
=10mA/0.5mA
V
I
=5V
V
CC
=50V,V
I
=0
V
O
=0.3V,I
O
=10mA
V
O(on)
0.3
0.5
-
13
-
-
0.88
I
O(off)
G
I
R
1
f
T
30
7
-
-
V
O
=5V,I
O
=5mA
10
1
R
2
/R
1
0.8
1.2
250
V
O
=10V,I
O
=5mA,f=100MHz
UNIT
mW
V
V
mA
°C
UNIT
V
V
mA
μA
KΩ
MHz
Version: C14

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Description Bipolar Transistors - BJT Digital Transistor NPN Bipolar Transistors - BJT Digital Transistor NPN Bipolar Transistors - BJT Digital Transistor NPN Bipolar Transistors - BJT Digital Transistor NPN Bipolar Transistors - BJT Digital Transistor NPN Bipolar Transistors - BJT Digital Transistor NPN Bipolar Transistors - BJT Digital Transistor NPN Bipolar Transistors - BJT Digital Transistor NPN
Product Category - - Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT
Manufacturer - - Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
RoHS - - Details Details Details Details Details Details Details
Mounting Style - - SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT
Package / Case - - SOT-23-3 SOT-23-3 SOT-523-3 SOT-323-3 SOT-523-3 SOT-23-3 SOT-23-3
Transistor Polarity - - NPN NPN NPN NPN NPN NPN NPN
Packaging - - Reel Reel Reel Reel Reel Reel Reel
Factory Pack Quantity - - 3000 3000 3000 3000 3000 3000 3000
Unit Weight - - 0.000282 oz 0.000282 oz 0.000071 oz 0.000176 oz 0.000071 oz 0.000282 oz 0.000282 oz
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