MCP6241/2
50 µA, 650 kHz Rail-to-Rail Op Amp
Features
•
•
•
•
•
•
Gain Bandwidth Product: 650 kHz (typ.)
Supply Current: I
Q
= 50 µA (typ.)
Supply Voltage: 1.8V to 5.5V
Rail-to-Rail Input/Output
Extended Temperature Range: -40°C to +125°C
Available in 5-pin SC-70 and SOT-23 packages
Description
The Microchip Technology Inc. MCP6241/2 operational
amplifiers (op amps) provide wide bandwidth for the
quiescent current. The MCP6241/2 has a 650 kHz Gain
Bandwidth Product (GBWP) and 77° (typ.) phase
margin. This family operates from a single supply
voltage as low as 1.8V, while drawing 50 µA (typ.)
quiescent current. In addition, the MCP6241/2 family
supports rail-to-rail input and output swing, with a
common mode input voltage range of V
DD
+ 300 mV to
V
SS
– 300 mV. These op amps are designed in one of
Microchip’s advanced CMOS processes.
Applications
•
•
•
•
•
•
Automotive
Portable Equipment
Photodiode (Transimpedance) Amplifier
Analog Filters
Notebooks and PDAs
Battery-Powered Systems
Package Types
MCP6241
SOT-23-5
V
OUT
1
V
SS
2
V
IN
+ 3
–
+
+
MCP6241R
SOT-23-5
5 V
DD
V
OUT
1
V
DD
2
4 V
IN
–
V
IN
+ 3
–
+
Available Tools
SPICE Macro Models (at www.microchip.com)
FilterLab
®
Software (at www.microchip.com)
5 V
SS
4 V
IN
–
Typical Application
R
G2
V
IN2
R
G1
V
IN1
V
DD
R
X
R
Y
R
Z
–
MCP6241
+
V
OUT
R
F
MCP6241
PDIP, SOIC, MSOP
NC 1
V
IN
– 2
V
IN
+ 3
V
SS
4
–
+
8 NC
7 V
DD
6 V
OUT
5 NC
MCP6241U
SC-70-5, SOT-23-5
V
IN
+ 1
V
SS
2
V
IN
– 3
+
–
5 V
DD
4 V
OUT
MCP6242
PDIP, SOIC, MSOP
V
OUTA
1
V
INA_
2
V
INA
+ 3
V
SS
4
- +
+
B
-
A
8 V
DD
7 V
OUTB
6 V
INB_
5 V
INB
+
Summing Amplifier Circuit
2004 Microchip Technology Inc.
DS21882B-page 1
MCP6241/2
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Absolute Maximum Ratings †
V
DD
- V
SS
.........................................................................7.0V
All Inputs and Outputs ................... V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input Voltage ....................................... |V
DD
- V
SS
|
Output Short Circuit Current ..................................continuous
Current at Input Pins ....................................................±2 mA
Current at Output and Supply Pins ............................±30 mA
Storage Temperature.................................... –65°C to +150°C
Maximum Junction Temperature (T
J
) .......................... +150°C
ESD Protection On All Pins (HBM;MM)
............... ≥
4 kV; 200V
PIN FUNCTION TABLE
Name
Function
V
IN
+, V
INA
+, V
INB
+
V
IN
–, V
INA
–, V
INB
–
V
DD
V
SS
V
OUT
, V
OUTA
, V
OUTB
Non-inverting Input
Inverting Input
Positive Power Supply
Negative Power Supply
Output
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, R
L
= 100 kΩ
to V
DD
/2 and V
OUT
≈
V
DD
/2.
Parameters
Input Offset
Input Offset Voltage
Extended Temperature
Input Offset Drift with Temperature
Power Supply Rejection
Input Bias Current and Impedance
Input Bias Current:
At Temperature
At Temperature
Input Offset Current
Common Mode Input Impedance
Differential Input Impedance
Common Mode
Common Mode Input Range
Common Mode Rejection Ratio
Open-Loop Gain
DC Open-Loop Gain (large signal)
Output
Maximum Output Voltage Swing
Output Short-Circuit Current
Power Supply
Supply Voltage
Quiescent Current per Amplifier
Sym
V
OS
V
OS
∆V
OS
/∆T
A
PSRR
I
B
I
B
I
B
I
OS
Z
CM
Z
DIFF
V
CMR
CMRR
A
OL
Min
–5.0
–7.0
—
—
—
—
—
—
—
—
V
SS
– 0.3
60
90
Typ
—
—
±3.0
83
±1.0
20
1100
±1.0
10 ||6
10
13
||3
—
75
110
13
Max
+5.0
+7.0
—
—
—
—
—
—
—
—
V
DD
+ 0.3
—
—
Units
mV
mV
Conditions
V
CM
= V
SS
T
A
= –40°C to +125°C,
(Note)
µV/°C T
A
= –40°C to +125°C,
V
CM
= V
SS
dB
pA
pA
pA
pA
Ω||pF
Ω||pF
V
dB
dB
V
CM
= –0.3V to 5.3V, V
DD
= 5V
V
OUT
= 0.3V to V
DD
– 0.3V,
V
CM
= V
SS
R
L
= 10 kΩ, 0.5V Output Overdrive
V
DD
= 1.8V
V
DD
= 5.5V
T
A
= +85°C
T
A
= +125°C
V
CM
= V
SS
V
OL
, V
OH
I
SC
I
SC
V
DD
I
Q
V
SS
+ 35
—
—
1.8
30
—
±6
±23
—
50
V
DD
– 35
—
—
5.5
70
mV
mA
mA
V
µA
I
O
= 0, V
CM
= V
DD
– 0.5V
Note:
The SC-70 package is only tested at +25°C.
DS21882B-page 2
2004 Microchip Technology Inc.
MCP6241/2
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8 to 5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
≈
V
DD
/2, R
L
= 10 kΩ to V
DD
/2 and C
L
= 60 pF.
Parameters
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
E
ni
e
ni
i
ni
—
—
—
10
45
0.6
—
—
—
µVp-p
nV/√Hz
fA/√Hz
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
GBWP
PM
SR
—
—
—
650
77
0.30
—
—
—
kHz
°
V/µs
G = +1
Sym
Min
Typ
Max
Units
Conditions
TEMPERATURE SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +1.8V to +5.5V and V
SS
= GND.
Parameters
Temperature Ranges
Extended Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SC70
Thermal Resistance, 5L-SOT-23
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
Thermal Resistance, 8L-MSOP
Note:
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
—
—
—
—
—
331
256
85
163
206
—
—
—
—
—
°C/W
°C/W
°C/W
°C/W
°C/W
T
A
T
A
T
A
-40
-40
-65
—
—
—
+125
+125
+150
°C
°C
°C
(Note)
Sym
Min
Typ
Max
Units
Conditions
The internal Junction Temperature (T
J
) must not exceed the Absolute Maximum specification of +150°C.
2004 Microchip Technology Inc.
DS21882B-page 3
MCP6241/2
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
≈
V
DD
/2,
R
L
= 100 kΩ to V
DD
/2 and C
L
= 60 pF.
20%
Percentage of Occurrences
18%
16%
14%
12%
10%
8%
6%
4%
2%
0%
630 Samples
V
CM
= V
SS
CMRR, PSRR (dB)
90
V
DD
= 5.0V
85
PSRR (V
CM
= V
SS
)
80
75
CMRR (V
CM
= -0.3 V to +5.3 V)
70
-5
-4
-3
-2
-1
-50
-25
Input Offset Voltage (mV)
0
25
50
75
Ambient Temperature (°C)
100
125
0
1
2
3
4
5
FIGURE 2-1:
Input Offset Voltage.
FIGURE 2-4:
Temperature.
120
Open-Loop Gain (dB)
CMRR, PSRR vs. Ambient
110
100
PSRR, CMRR (dB)
90
80
70
60
50
40
30
20
1.E+01
Gain
CMRR
PSRR+
80
60
40
20
0
-20
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
1.E+06
1.E+07
-60
Phase
-90
-120
-150
-180
V
DD
= 5.0V
1.E+02
1.E+03
1.E+04
1.E+05
10
100
1k
Frequency (Hz)
10k
100k
0.1
1
-210
10 100 1k 10k 100k 1M 10M
Frequency (Hz)
FIGURE 2-2:
Frequency.
26%
24%
22%
20%
18%
16%
14%
12%
10%
8%
6%
4%
2%
0%
0
6
PSRR, CMRR vs.
FIGURE 2-5:
Frequency.
30%
Percentage of Occurrences
25%
20%
15%
10%
5%
0%
0.0
0.2
0.3
0.5
Open-Loop Gain, Phase vs.
Percentage of Occurrences
180 Samples
V
CM
= V
SS
T
A
= +85°C
180 Samples
V
CM
= V
SS
T
A
= +125°C
0.6
0.8
0.9
1.1
1.2
1.4
1.5
1.7
1.8
Input Bias Current (pA)
Input Bias Current (nA)
FIGURE 2-3:
Input Bias Current at +85°C.
FIGURE 2-6:
Input Bias Current at +125°C.
DS21882B-page 4
2004 Microchip Technology Inc.
2.0
12
18
24
30
36
42
Open-Loop Phase (°)
PSRR-
100
R
L
= 10.0 kΩ
V
DD
= 5.0V
V
CM
= V
DD
/2
0
-30
MCP6241/2
Note:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
≈
V
DD
/2,
R
L
= 100 kΩ to V
DD
/2 and C
L
= 60 pF.
10,000
Input Noise Voltage Density
(nV/√Hz)
20%
Percentage of Occurrences
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
628 Samples
V
CM
= V
SS
16%
T
A
= -40°C to +125°C
18%
14%
12%
10%
8%
6%
4%
2%
0%
-12
-10
10
5.0
1,000
100
10
Frequency (Hz)
Input Offset Voltage Drift (µV/°C)
FIGURE 2-7:
vs. Frequency.
300
Input Offset Voltage (µV)
200
100
0
-100
-200
-300
-0.4
-0.2
0.0
0.2
T
A
= -40°C
T
A
= +25°C
T
A
= +85°C
T
A
= +125°C
Input Noise Voltage Density
FIGURE 2-10:
Input Offset Voltage Drift.
700
Input Offset Voltage (µV)
650
600
550
500
450
400
350
300
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DD
= 1.8 V
V
CM
= V
SS
V
DD
= 5.5 V
V
DD
= 1.8 V
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
4.0
4.5
5.5
Common Mode Input Voltage (V)
Output Voltage (V)
FIGURE 2-8:
Input Offset Voltage vs.
Common Mode Input Voltage at V
DD
= 1.8V.
400
Input Offset Voltage (µV)
V
DD
= 5.5 V
300
200
100
0
-100
-200
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Common Mode Input Voltage (V)
T
A
= -40°C
T
A
= +25°C
T
A
= +85°C
T
A
= +125°C
FIGURE 2-11:
Output Voltage.
35
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
Input Offset Voltage vs.
Short Circuit Current (mA)
+I
SC
T
A
= +125°C
T
A
= +85°C
T
A
= +25°C
T
A
= -40°C
-I
SC
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power Supply Voltage (V)
FIGURE 2-9:
Input Offset Voltage vs.
Common Mode Input Voltage at V
DD
= 5.5V.
FIGURE 2-12:
Output Short-Circuit Current
vs. Ambient Temperature.
2004 Microchip Technology Inc.
DS21882B-page 5
12
-8
-6
-4
-2
0.1
1
10
100
1k
10k
100k
0
2
4
6
8
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