BLF7G27L-90P;
BLF7G27LS-90P
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
90 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
IS-95
f
(MHz)
2500 to 2700
Single carrier W-CDMA 2500 to 2700
[1]
[2]
I
Dq
(mA)
720
720
V
DS
(V)
28
28
P
L(AV)
(W)
16
25
G
p
(dB)
18.5
18.5
D
29
35
ACPR
885k
ACPR
5M
(dBc)
-
36
[2]
46
[1]
-
(%) (dBc)
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is
3.84 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for broadband operation (2500 MHz to 2700 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range
BLF7G27L-90P; BLF7G27LS-90P
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1]
Simplified outline
Graphic symbol
BLF7G27L-90P (SOT1121A)
1
2
1
3
5
3
4
2
sym117
5
4
BLF7G27LS-90P (SOT1121B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
[1]
3
4
1
2
5
1
3
5
4
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF7G27L-90P
BLF7G27LS-90P
-
-
flanged LDMOST ceramic package; 2 mounting holes;
4 leads
earless flanged LDMOST ceramic package; 4 leads
Version
SOT1121A
SOT1121B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
0.5
-
65
-
Max
65
+13
18
+150
225
Unit
V
V
A
C
C
BLF7G27L-90P_BLF7G27LS-90P#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
2 of 14
BLF7G27L-90P; BLF7G27LS-90P
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 16 W
Typ
0.4
Unit
K/W
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 60 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 60 mA
Min
65
1.5
-
9.6
-
-
-
Typ
-
1.8
-
11.5
-
0.53
0.24
Max
-
2.3
1.4
-
150
-
-
Unit
V
V
A
A
nA
S
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 0.6 mA
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 2100 mA
7. Test information
Table 7.
Functional test information
Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth
is 1.2288 MHz; f
1
= 2500 MHz; f
2
= 2700 MHz; RF performance at V
DS
= 28 V; I
Dq
= 720 mA;
T
case
= 25
C; 2 sections combined unless otherwise specified; in a class-AB production test circuit.
Symbol
P
L(AV)
G
p
RL
in
D
ACPR
885k
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio (885 kHz)
P
L(AV)
= 16 W
P
L(AV)
= 16 W
P
L(AV)
= 16 W
P
L(AV)
= 16 W
Conditions
Min Typ Max Unit
-
17
-
25
-
16
-
W
dB
dB
%
dBc
18.5 -
15
-
29
-
46 41
7.1 Ruggedness in class-AB operation
The BLF7G27L-90P and BLF7G27LS-90P are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
DS
= 28 V; I
Dq
= 720 mA; P
L
= 90 W (CW); f = 2500 MHz.
BLF7G27L-90P_BLF7G27LS-90P#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
3 of 14
BLF7G27L-90P; BLF7G27LS-90P
Power LDMOS transistor
7.2 Single carrier IS-95
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
19
G
p
(dB)
18
(1)
(2)
(3)
aaa-000968
50
η
D
(%)
40
aaa-00969
(1)
(2)
(3)
17
30
16
15
5
15
25
35
45
P
L
(W)
55
20
5
15
25
35
45
P
L
(W)
55
V
DS
= 28 V; I
Dq
= 720 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
V
DS
= 28 V; I
Dq
= 720 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 1.
Single carrier IS-95 power gain as a function of
output power; typical values
Fig 2.
Single carrier IS-95 drain efficiency as a
function of output power; typical values
BLF7G27L-90P_BLF7G27LS-90P#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
4 of 14
BLF7G27L-90P; BLF7G27LS-90P
Power LDMOS transistor
-30
APCR
855
(dBc)
-35
aaa-000970
-50
aaa-000971
APCR
1980
(dBc)
-55
(1)
(2)
-40
(1)
(2)
(3)
(3)
-60
-45
-65
-50
-55
5
15
25
35
45
P
L
(W)
55
-70
5
15
25
35
45
P
L
(W)
55
V
DS
= 28 V; I
Dq
= 720 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
V
DS
= 28 V; I
Dq
= 720 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 3.
Single carrier IS-95 ACPR at 885 kHz as a
function of output power; typical values
aaa-000972
Fig 4.
Single carrier IS-95 ACPR at 1980 kHz as a
function of output power; typical values
aaa-000973
10
PAR
(dB)
9
8
7
6
5
120
P
L(M)
(W)
110
(1)
(2)
100
(1)
(2)
(3)
(3)
90
80
4
3
5
15
25
35
45
P
L
(W)
55
70
5
15
25
35
45
P
L
(W)
55
V
DS
= 28 V; I
Dq
= 720 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
V
DS
= 28 V; I
Dq
= 720 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 5.
Single carrier IS-95 peak-to-average power
ratio as a function of output power;
typical values
Fig 6.
Single carrier IS-95 peak output power as a
function of output power; typical values
BLF7G27L-90P_BLF7G27LS-90P#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
5 of 14
京公网安备 11010802033920号
EEWORLD
