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BAT54CXV3T1

Description
Schottky Diodes u0026 Rectifiers 30V 225mW Dual
CategoryDiscrete semiconductor    diode   
File Size51KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

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BAT54CXV3T1 Overview

Schottky Diodes u0026 Rectifiers 30V 225mW Dual

BAT54CXV3T1 Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
Parts packaging codeSC-89
package instructionR-PDSO-F3
Contacts3
Manufacturer packaging code463C-02
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.24 V
JESD-30 codeR-PDSO-F3
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current0.6 A
Number of components2
Number of terminals3
Maximum operating temperature125 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.24 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.005 µs
surface mountYES
technologySCHOTTKY
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature40
Base Number Matches1
BAT54CXV3
Dual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
www.onsemi.com
Extremely Fast Switching Speed
Low Forward Voltage − 0.35 V (Typ) @ I
F
= 10 mAdc
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
J
= 125°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Forward Current (DC)
Non−Repetitive Peak Forward
Current, t
p
< 10 msec
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle =
66%
Junction Temperature
Storage Temperature Range
Thermal Resistance,
Junction−to−Ambient (Note 1)
Symbol
V
R
P
F
240
1.9
I
F
I
FSM
I
FRM
200 Max
600
300
mW
mW/°C
mA
mA
mA
Value
30
Unit
V
30 VOLT
DUAL COMMON CATHODE
SCHOTTKY BARRIER DIODES
3
1
2
SC−89
CASE 463C
STYLE 3
1
ANODE
3
CATHODE
2
ANODE
MARKING DIAGRAM
T
J
T
stg
R
qJA
−55 to 125
−55 to +150
525
°C
°C
°C/W
1
5CM
G
G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 board with minimum mounting pad.
5C
= Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BAT54CXV3T1G
Package
SC−89
(Pb−Free)
Shipping
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2014
1
November, 2014 − Rev. 3
Publication Order Number:
BAT54CXV3/D

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