Fast Recovery
Epitaxial Diode
(FRED) Module
Preliminary data
MEO 500-06 DA
V
RRM
= 600 V
I
FAVM
= 514 A
t
rr
= 250 ns
3
3
1
V
RSM
V
600
V
RRM
V
600
Type
1
MEO 500-06DA
Symbol
I
FRMS
I
FAVM
ÿÿ
x
I
FRM
I
FSM
Test Conditions
T
C
= 75
°C
T
C
= 75
°C;
rectangular, d = 0.5
t
P
< 10
ms;
rep. rating, pulse width limited by T
VJM
T
VJ
= 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
726
514
2680
4800
5280
4320
4750
115200
117100
93300
94800
-40...+150
-40...+125
110
A
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
°C
°C
°C
W
V~
V~
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
I
2
t
T
VJ
= 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Features
International standard package
with DCB ceramic base plate
Planar passivated chips
Short recovery time
Low switching losses
Soft recovery behaviour
Isolation voltage 3600 V~
UL registered E 72873
q
q
q
q
q
q
q
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
T
stg
T
Smax
P
tot
V
ISOL
M
d
d
S
d
A
a
Weight
Symbol
I
R
Test Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 300 A;
I
F
= 520 A;
V
T0
r
T
R
thJH
R
thJC
t
rr
I
RM
V
R
= V
RRM
V
R
= 0.8 • V
RRM
V
R
= 0.8 • V
RRM
T
VJ
T
VJ
T
VJ
T
VJ
= 125°C
= 25°C
= 125°C
= 25°C
T
C
= 25°C
50/60 Hz, RMS t = 1 min
I
ISOL
£
1 mA
t=1s
Mounting torque (M6)
Terminal connection torque (M6)
Creeping distance on surface
Strike distance through air
Maximum allowable acceleration
1750
3000
3600
Applications
Antiparallel diode for high frequency
switching devices
Free wheeling diode in converters
and motor control circuits
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
q
q
q
q
q
2.25-2.75/20-25 Nm/lb.in.
4.50-5.50/40-48 Nm/lb.in.
12.7
9.6
50
150
mm
mm
m/s
2
g
Advantages
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
q
q
q
q
Characteristic Values (per diode)
typ.
max.
24
6
160
1.17
1.36
1.41
1.52
0.85
1.09
0.114
0.071
T
VJ
= 100°C
T
VJ
= 25°C
T
VJ
= 100°C
250
300
88
132
mA
mA
mA
V
V
V
V
V
mW
K/W
K/W
ns
A
A
Dimensions in mm (1 mm = 0.0394")
V
F
For power-loss calculations only
DC current
DC current
I
F
= 600 A
V
R
= 300 V
-di/dt = 800 A/ms
x
I
FAVM
rating includes reverse blocking losses at T
VJM
, V
R
= 0.6 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1-2
749
MEO 500-06 DA
800
A
I
F
600
20
T = 100°C
VJ
V
R
= 300V
µC
Q
r
15
I
RM
200
T = 100°C
VJ
V
R
= 300V
A
150
400
T
VJ
=125°C
T
VJ
=25°C
10
I
F
=1200A
I
F
= 600A
I
F
= 300A
I
F
=1200A
100
I
F
= 600A
I
F
= 300A
200
5
50
0
0.0
0.4
0.8
1.2
V
F
1.6 V 2.0
0
100
A/
m
s 1000
-di
F
/dt
0
0
200
400
600 A/
m
s 1000
800
-di
F
/dt
Fig. 1 Forward current I
F
versus
max. voltage drop V
F
per leg
1.4
Fig. 2 Typ. reverse recovery
charge Q
r
versus -di
F
/dt
450
ns
Fig. 3 Typ. peak reverse current I
RM
versus -di
F
/dt
60
V
50
V
FR
40
T
VJ
= 100°C
V
R
= 300V
t
fr
T
VJ
= 100°C
I
F
= 600A
3.0
µs
2.5
t
fr
2.0
1.2
K
f
1.0
t
rr
400
350
0.8
I
RM
Q
r
300
I
F
=1200A
I
F
= 600A
I
F
= 300A
V
FR
30
20
1.5
1.0
0.5
0.0
600 A/
m
s 1000
800
di
F
/dt
0.6
250
10
0
0
200
400
0.4
0
40
80
120 °C 160
T
VJ
200
0
200
400
600 A/
m
s 1000
800
-di
F
/dt
Fig. 4 Dynamic parameters Q
r
, I
RM
versus junction temperature T
VJ
0.12
K/W
0.10
0.08
Z
thJS
thJH
0.06
0.04
0.02
0.00
0.001
Fig. 5 Typ. recovery time t
rr
versus -di
F
/dt
Fig. 6 Typ. peak forward voltage V
FR
and t
fr
versus di
F
/dt
Constants for Z
thJS
calculation:
i
1
2
3
4
R
thi
(K/W)
0.001
0.004
0.027
0.082
t
i
(s)
0.08
0.024
0.112
0.464
0.01
0.1
1s
10
t
Fig. 7 Transient thermal impedance junction to heatsink
© 2000 IXYS All rights reserved
2-2
814
Mobile and portable
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