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BAV100

Description
Programmers - Processor Based STM8S STM32 Programr 5V USB 2.0 JTAG DFU
CategoryDiscrete semiconductor    diode   
File Size292KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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BAV100 Overview

Programmers - Processor Based STM8S STM32 Programr 5V USB 2.0 JTAG DFU

BAV100 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionO-LELF-R2
Reach Compliance Codecompliant
ECCN codeEAR99
Samacsys Confidence4
Samacsys StatusReleased
Samacsys PartID441928
Samacsys Pin Count2
Samacsys Part CategoryDiode
Samacsys Package CategoryOther
Samacsys Footprint NameMini-MELF (LL34)
Samacsys Released Date2019-04-25 10:58:34
Is SamacsysN
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LELF-R2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Maximum output current0.2 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage250 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperature30
Base Number Matches1
BAV100/101/102/103
Taiwan Semiconductor
Small Signal Product
CREAT BY ART
Hermetically Sealed Glass High Voltage Switching Diodes
FEATURES
- High voltage switching device
- Ideal for automated placement
- Hermetically sealed glass
- Compression bonded construction
- All external surfaces are corrosion
resistant and leads are readily solderable
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MINI MELF
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
SYMBOL
P
D
V
RRM
I
F(AV)
I
FSM
VALUE
500
250
200
1.0
4.0
UNIT
mW
V
mA
A
°C
Power dissipation
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak forward
surge current
Operating and storage temperature range
Electrical Characteristics
PARAMETER
No V10
tR 0&
eco B
mm AV
10
en
de 2
d
Pulse width = 1.0 s
Pulse width = 1.0
μs
T
J
, T
STG
SYMBOL
MIN
60
120
200
250
-
BAV100
BAV101
BAV102
I
R
= 100
μA
I
R
= 100
μA
I
R
= 100
μA
B
V
BAV103
I
R
= 100
μA
V
R
= 50 V
I
F
= 100 mA
V
F
BAV100
BAV101
V
R
= 100 V
V
R
= 150 V
V
R
= 200 V
R
θJA
V
R
= 0 , f = 1.0 MHz
(Note)
C
J
t
rr
-
-
350
BAV102
I
R
-
BAV103
- Polarity: Indicated by black cathode band
-65 to +200
MAX
UNIT
BA
Breakdown voltage
-
V
Forward voltage
1.0
100
100
100
100
V
Peak reverse current
nA
Thermal resistance, junction to ambient
Junction capacitance
Reverse recovery time
°C/W
5.0
50
pF
ns
Notes : Reverse recovery test conditions : I
F
= I
R
= 30 mA , I
rr
= 3 mA , R
L
= 100
Document Number: DS_S1501002
Version: C15

BAV100 Related Products

BAV100 BAV101
Description Programmers - Processor Based STM8S STM32 Programr 5V USB 2.0 JTAG DFU Diodes - General Purpose, Power, Switching 1500W 20V 5% UNI TRANSZORB-TVS
Is it Rohs certified? conform to conform to
Maker Taiwan Semiconductor Taiwan Semiconductor
package instruction O-LELF-R2 O-LELF-R2
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Is Samacsys N N
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-LELF-R2 O-LELF-R2
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 200 °C 200 °C
Minimum operating temperature -65 °C -65 °C
Maximum output current 0.2 A 0.2 A
Package body material GLASS GLASS
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Maximum power dissipation 0.5 W 0.5 W
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 250 V 250 V
Maximum reverse recovery time 0.05 µs 0.05 µs
surface mount YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form WRAP AROUND WRAP AROUND
Terminal location END END
Base Number Matches 1 1

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