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SI9750CY-T1-E3

Description
Gate Drivers InRush Current Limit MOSFET
CategoryAnalog mixed-signal IC    Drivers and interfaces   
File Size77KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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SI9750CY-T1-E3 Overview

Gate Drivers InRush Current Limit MOSFET

SI9750CY-T1-E3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerVishay
Parts packaging codeSOIC
package instructionSOP, SOP16,.25
Contacts16
Reach Compliance Codeunknown
ECCN codeEAR99
high side driverYES
Interface integrated circuit typeBUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 codeR-PDSO-G16
JESD-609 codee3
length9.9 mm
Humidity sensitivity level1
Number of functions1
Number of terminals16
Maximum operating temperature70 °C
Minimum operating temperature
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP16,.25
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
power supply3/13 V
Certification statusNot Qualified
Maximum seat height1.75 mm
Maximum supply voltage13.2 V
Minimum supply voltage2.9 V
surface mountYES
Temperature levelCOMMERCIAL
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
Disconnect time5 µs
connection time5 µs
width3.9 mm
Si9750
Vishay Siliconix
In-Rush Current Limit MOSFET Driver
FEATURES
D
2.9- to 13-V Input Operating Range
D
Microprocessor RESET
D
Integrated High-Side Driver for N-Channel MOSFET
D
Programmable di/dt Current
DESCRIPTION
The Si9750 current limit MOSFET interface IC is designed to
operate between a power source and a load using a low
on-resistance power MOSFET with a sense terminal or in
conjunction with a low ohmic sense resistor. The Si9750
current limiter prevents source and load transients during hot
swap and power-on with programmable dv/dt and di/dt. Both
turn-on and steady-state current limits can be individually
programmed, providing protection against short circuits.
Power on RESET and logic controls allow complete
microprocessor interfacing. The RESET function of the
Si9750 is industry-standard with full programmability.
The Si9750 is available in a 16-pin SOIC package and is rated
over the commercial temperature range (0 to 70_C).
The Si9750 is available in both standard and lead (Pb)-free
packages.
FUNCTIONAL BLOCK DIAGRAM
V
DD
V
DD
COIL
Bias
Ref
Boost
POR
HI/LO
ENABLE
STATUS
I
BIAS
C
RETRY
Overcurrent
+
LIMSET
LOAD
POR
C
RST
POR
Reset
Delay
Bandgap
Ref
Reset
+
Ref
RESET
V
RST
Load
SENSE
R
LIMSET
R
SENSE
(mW)
V
LOAD
Control
Gate
Drive
GATE
BOOST
C
BOOST
Low R
DS
N-Channel FET
L
BOOST
R
BIAS
C
GATE
Retry
Delay
GND
Document Number: 70028
S-40754—Rev. D, 19-Apr-04
www.vishay.com
1

SI9750CY-T1-E3 Related Products

SI9750CY-T1-E3 SI9750CY-T1
Description Gate Drivers InRush Current Limit MOSFET Gate Drivers InRush Current Limit MOSFET
Is it lead-free? Lead free Contains lead
Maker Vishay Vishay
Parts packaging code SOIC SOIC
package instruction SOP, SOP16,.25 SOP, SOP16,.25
Contacts 16 16
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
high side driver YES YES
Interface integrated circuit type BUFFER OR INVERTER BASED MOSFET DRIVER BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 code R-PDSO-G16 R-PDSO-G16
JESD-609 code e3 e0
length 9.9 mm 9.9 mm
Number of functions 1 1
Number of terminals 16 16
Maximum operating temperature 70 °C 70 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code SOP SOP
Encapsulate equivalent code SOP16,.25 SOP16,.25
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 240
power supply 3/13 V 3/13 V
Certification status Not Qualified Not Qualified
Maximum seat height 1.75 mm 1.75 mm
Maximum supply voltage 13.2 V 13.2 V
Minimum supply voltage 2.9 V 2.9 V
surface mount YES YES
Temperature level COMMERCIAL COMMERCIAL
Terminal surface MATTE TIN Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING
Terminal pitch 1.27 mm 1.27 mm
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 30
Disconnect time 5 µs 5 µs
connection time 5 µs 5 µs
width 3.9 mm 3.9 mm
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