PTFC210202FC
Thermally-Enhanced High Power RF LDMOS FET
28 W, 28 V, 1800 – 2200 MHz
Description
The PTFC210202FC integrates two independent 10-watt LDMOS
FETs and is designed for use in cellular amplifier applications in the
2110 to 2170 MHz frequency band. Manufactured with Infineon's
advanced LDMOS process, this device provides excellent thermal
performance and superior reliability.
PTFC210202FC
Package H-37248-4
V
DD
= 28 V, I
DQ
= 170 mA, ƒ = 2170 MHz
3GPP WCDMA signal,
PAR = 7.5 dB, 3.84 MHz BW
Peak/Average Ratio, Gain (dB)
24
20
16
12
8
4
0
PAR @ 0.01% CCDF
Efficiency
Gain
60
40
20
0
-20
-40
ptfc210202fc_g1
Single-carrier WCDMA Drive-up
Features
•
•
Input matched
Typical CW performance, 2170 MHz, 28 V,
combined outputs
- Output power at P
1dB
= 28 W
- Efficiency = 62%
- Gain = 20.9 dB
Capable of handling 10:1 VSWR @28 V, 28 W
(CW) output power
Integrated ESD protection : Human Body Model,
Class 1C (per JESD22-A114)
Low thermal resistance
Pb-free and RoHS compliant
•
Efficiency (%)
•
•
•
28
32
36
40
44
-60
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 170 mA, P
OUT
= 5 W avg, ƒ
1
= 2160 MHz, ƒ
2
= 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Linear Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
G
ps
Min
20
26.5
—
Typ
21
29
–31
Max
—
—
–28
Unit
dB
%
dBc
h
D
ACPR
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 03.4, 2016-06-22
PTFC210202FC
DC Characteristics
(each side)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V(
BR)DSS
I
DSS
I
DSS
I
GSS
R
DS(on)
V
GS
Min
65
—
—
—
—
2.40
Typ
—
—
—
—
0.05
2.70
Max
—
0.1
1.0
1
—
3.05
Unit
V
µA
µA
µA
W
V
Gate Leakage Current
On-State Resistance
Operating Gate Voltage
V
GS
= 10 V, V
DS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
=
0.17
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance
(T
CASE
= 70°C, 25 W CW)
Symbol
V
DSS
V
GS
V
DD
T
J
T
STG
R
qJC
Value
65
–6 to +10
0 to +32
225
–65 to +150
2.2
Unit
V
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFC210202FC V1 R0
PTFC210202FC V1 R250
Order Code
PTFC210202FCV1R0XTMA1
PTFC210202FCV1R250XTMA1
Package Description
H-37248-4, earless flange
H-37248-4, earless flange
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 9
Rev. 03.4, 2016-06-22
PTFC210202FC
Typical Performance
(data taken in a production test fixture)
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 170 mA, ƒ = 2170 MHz,
3GPP WCDMA signal, PAR = 7.5 dB,
BW = 3.84 MHz
-10
60
50
40
ACP Up
-40
-50
-60
ACP Low
30
20
10
-10
Single-carrier WCDMA 3GPP Drive-up
V
DD
= 28 V, I
DQ
= 170 mA,
3GPP WCDMA signal,
PAR = 7.5 dB, BW = 3.84 MHz
2110 ACPL
2140 ACPL
2170 ACPL
2110 ACPU
2140 ACPU
2170 ACPU
2110 EFF
2140 EFF
2170 EFF
60
50
40
30
20
10
ACP Up & Low (dBc)
Drain Efficiency(%)
-30
-30
-40
-50
-60
28
32
36
40
ptfc210202fc_g2
44
28
32
36
40
ptfc210202fc_g3
44
Average Output Power (dBm)
Average Output Power (dBm)
V
DD
= 28 V, I
DQ
= 170 mA, P
OUT
= 36dBm,
3GPP WCDMA signal, PAR = 7.5 dB
-25
Return Loss
-5
23
22
Single-carrier WCDMA Broadband
Performance
V
DD
= 28 V, I
DQ
= 170 mA, P
OUT
= 36dBm,
3GPP WCDMA signal, PAR = 7.5 dB
40
35
30
25
20
Single-carrier WCDMA Broadband
Performance
21
20
19
-35
ACP Up
-40
-15
Efficiency
-20
-45
-25
1950 2000 2050 2100 2150 2200 2250 2300
ptfc210202fc_g5
18
15
1950 2000 2050 2100 2150 2200 2250 2300
ptfc210202fc_g4
Frequency (MHz)
Frequency (MHz)
Data Sheet
3 of 9
Rev. 03.4, 2016-06-22
Drain Efficiency (%)
Return Loss (dB)
ACP Up (dBc)
-30
-10
Gain
Gain (dB)
Drain Efficiency(%)
Efficiency
ACP Up & Low (dBc)
-20
-20
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