1N5802 thru 1N5806
VOIDLESS-HERMETICALLY-SEALED
ULTRAFAST RECOVERY GLASS
RECTIFIERS
SCOTTSDALE DIVISION
DESCRIPTION
These “Ultrafast Recovery” rectifier diodes are military qualified to MIL-PRF-19500/477
and are ideal for high-reliability applications where a failure cannot be tolerated. These
industry-recognized 2.5 Amp rated rectifiers for working peak reverse voltages from 50 to
150 volts are hermetically sealed with voidless-glass construction using an internal
“Category I” metallurgical bond. They are also available in surface-mount packages (see
separate data sheet for 1N5802US thru 1N5806US). Microsemi also offers numerous
other rectifier products to meet higher and lower current ratings with various recovery
time speed requirements including standard, fast and ultrafast in thru-hole and surface-
mount packages.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
“A” Package
FEATURES
•
•
•
•
•
•
Popular JEDEC registered 1N5802 to 1N5806 series
Voidless hermetically sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “Category
I”
Metallurgical bonds
JAN, JANTX, JANTXV, and JANS available per MIL-PRF-
19500/477
•
Surface mount equivalents also available in a square end-cap
MELF configuration with “US” suffix (see separate data sheet
for 1N5802US thru 1N5806US)
APPLICATIONS / BENEFITS
•
Ultrafast recovery 2.5 Amp rectifier series 50 to 150V
•
Military and other high-reliability applications
•
Switching power supplies or other applications
requiring extremely fast switching & low forward loss
•
High forward surge current capability
•
Low thermal resistance
•
Controlled avalanche with peak reverse power
capability
•
Inherently radiation hard
as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
•
•
•
•
•
•
•
•
Junction Temperature: -65
o
C to +175
o
C
Storage Temperature: -65
o
C to +175
o
C
Average Rectified Forward Current (I
O
): 2.5 A @ T
L
= 75ºC
Thermal Resistance: 36 ºC/W junction to lead (L=.375 in)
Thermal Impedance: 4.5
o
C/W @ 10 ms heating time
Forward Surge Current: 35 Amps @ 8.3 ms half-sine
Capacitance: 25 pF @ V
R
= 10 Volts, f = 1 MHz
Solder temperature: 260ºC for 10 s (maximum)
•
•
MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass with
Tungsten slugs (package dimensions on last page)
TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb)
over Copper. Note: Previous JANS inventory had
solid Silver axial-leads and no finish.
MARKING: Body painted and part number, etc.
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-296
Weight: 340 mg
•
•
•
•
ELECTRICAL CHARACTERISTICS
WORKING
PEAK
REVERSE
VOLTAGE
V
RWM
VOLTS
BREAKDOWN
VOLTAGE
(MIN.)
@ 100μA
V
BR
VOLTS
AVERAGE
RECTIFIED
CURRENT
I
O1
@
T
L
=+75ºC
(NOTE 1)
AMPS
AVERAGE
RECTIFIED
CURRENT
I
O2
@
T
A
=+55ºC
(Note 2)
AMPS
MAXIMUM
FORWARD
VOLTAGE
@1A
(8.3 ms pulse)
V
F
VOLTS
o
o
25 C
100 C
0.875
0.800
REVERSE
CURRENT
(MAX)
@ V
RWM
I
R
SURGE
CURRENT
(MAX)
I
FSM
(NOTE 3)
REVERSE
RECOVERY
TIME (MAX)
(NOTE 4)
t
rr
ns
25
25
25
25
25
TYPE
1N5802 – 1N5806
AMPS
μA
o
o
25 C 100 C
1N5802
50
55
2.5
1.0
1
50
35
1N5803
75
80
2.5
1.0
1
50
35
1N5804
100
110
2.5
1.0
0.875
0.800
1
50
35
1N5805
125
135
2.5
1.0
1
50
35
1N5806
150
160
2.5
1.0
0.875
0.800
1
50
35
NOTE 1:
I
O1
is rated at 2.5 A @ T
L
= 75ºC at 3/8 inch lead length. Derate at 25 mA/ºC for T
L
above 75ºC.
NOTE 2:
I
O2
is rated at 1.0 A @ T
A
= 55ºC for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where T
J(max)
does not exceed 175ºC. Derate at 8.33 mA/ºC for T
A
above 55ºC.
o
NOTE 3:
T
A
= 25 C @ I
O
= 1.0 A and V
RWM
for ten 8.3 ms surges at 1 minute intervals
NOTE 4:
I
F
= 0.5 A, I
RM
= 0.5 A, I
R(REC)
= .05 A
Copyright
©
2007
1-15-2007 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N5802 thru 1N5806
VOIDLESS-HERMETICALLY-SEALED
ULTRAFAST RECOVERY GLASS
RECTIFIERS
SCOTTSDALE DIVISION
Symbol
V
BR
V
RWM
I
O
V
F
I
R
C
t
rr
SYMBOLS & DEFINITIONS
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature
range
Average Rectified Output Current: Output Current Averaged over a full cycle with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing
from the forward direction to the reverse direction and a specified recovery decay point after a peak reverse
current occurs.
WWW .
Microsemi
.C
OM
GRAPHS
FIGURE 1
OUTPUT CURRENT vs. LEAD TEMP.
PACKAGE DIMENSIONS inches/[mm]
1N5802 – 1N5806
NOTE: Lead tolerance = +0.002/-0.003 inches
Copyright
©
2007
1-15-2007 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
51mcu
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