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BSS131H6327XT

Description
Tactile Switches Top Actuated w/o boss w/o ground
CategoryDiscrete semiconductor    The transistor   
File Size436KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSS131H6327XT Overview

Tactile Switches Top Actuated w/o boss w/o ground

BSS131H6327XT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompliant
ConfigurationSingle
Maximum drain current (Abs) (ID)0.11 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.36 W
surface mountYES
Base Number Matches1
Type
BSS131
SIPMOS Small-Signal-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic level
• dv /dt rated
• Pb-free lead-plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
®
Product Summary
V
DS
R
DS(on),max
I
D
240
14
0.1
V
Ω
A
PG-SOT-23
Type
BSS131
Parameter
Package
PG-SOT23
Pb-free
Yes
Tape and Reel Information
H6327
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Marking
SRs
Value
0.11
0.09
0.4
Unit
A
Continuous drain current
Pulsed drain current
I
D,pulse
T
A
=25 °C
I
D
=0.1 A,
V
DS
=192 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
ESD Class
V
GS
JESD22-A114-HBM
P
tot
T
j
,
T
stg
T
A
=25 °C
±20
Class 0
0.36
-55 ... 150
55/150/56
V
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
W
°C
Rev. 2.6
page 1
2012-03-29
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