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BC68-25PASX

Description
Bipolar Transistors - BJT 2A NPN Medium Power Transistors
Categorysemiconductor    Discrete semiconductor   
File Size621KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BC68-25PASX Overview

Bipolar Transistors - BJT 2A NPN Medium Power Transistors

BC68-25PASX Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerNXP
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDFN2020D-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max20 V
Collector- Base Voltage VCBO32 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage600 mV
Maximum DC Collector Current3 A
Gain Bandwidth Product fT170 MHz
Maximum Operating Temperature+ 150 C
Continuous Collector Current2 A
DC Collector/Base Gain hfe Min160 at 500 mA, 1 V
DC Current Gain hFE Max375 at 500 mA, 1 V
Minimum Operating Temperature- 55 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
Pd - Power Dissipation1.65 W
Factory Pack Quantity3000
BC68PAS series
20 V, 2 A NPN medium power transistors
Rev. 1 — 19 June 2015
Product data sheet
1. Product profile
1.1 General description
NPN medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless small
Surface-Mounted Device (SMD) plastic package with medium power capability and visible
and solderable side pads.
PNP complement: BC69PAS series
1.2 Features and benefits
High collector current capability
Two current gain selections
I
C
and I
CM
Reduced Printed-Circuit Board (PCB)
Leadless very small SMD plastic
area requirements
package with medium power capability
Exposed heat sink for excellent thermal
Suitable for Automatic Optical
and electrical conductivity
Inspection (AOI) of solder joint
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
Battery driven devices
MOSFET drivers
Low-side switches
Power management
Amplifiers
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
C unless otherwise specified
Symbol
V
CEO
I
C
I
CM
h
FE
Parameter
collector current
peak collector current
DC current gain
h
FE
selection -25
[1]
Pulse test: t
p
300
s;  
0.02.
Conditions
Min
-
-
-
[1]
[1]
Typ
-
-
-
-
-
Max Unit
20
2
3
375
375
V
A
A
collector-emitter voltage open base
single pulse; t
p
1 ms
V
CE
= 1 V; I
C
= 500 mA
V
CE
= 1 V; I
C
= 500 mA
85
160

BC68-25PASX Related Products

BC68-25PASX BC68PASX
Description Bipolar Transistors - BJT 2A NPN Medium Power Transistors NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Manufacturer NXP NXP
RoHS Details Details
Technology Si Si
Mounting Style SMD/SMT SMD/SMT
Package / Case DFN2020D-3 DFN2020D-3
Transistor Polarity NPN NPN
Configuration Single Single
Collector- Emitter Voltage VCEO Max 20 V 20 V
Collector- Base Voltage VCBO 32 V 32 V
Emitter- Base Voltage VEBO 5 V 5 V
Collector-Emitter Saturation Voltage 600 mV 600 mV
Maximum DC Collector Current 3 A 3 A
Gain Bandwidth Product fT 170 MHz 170 MHz
Maximum Operating Temperature + 150 C + 150 C
Continuous Collector Current 2 A 2 A
DC Collector/Base Gain hfe Min 160 at 500 mA, 1 V 85 at 500 mA, 1 V
DC Current Gain hFE Max 375 at 500 mA, 1 V 375 at 500 mA, 1 V
Minimum Operating Temperature - 55 C - 55 C
Pd - Power Dissipation 1.65 W 1.65 W
Factory Pack Quantity 3000 3000
Packaging Cut Tape Cut Tape
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