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BFP-720FESD-H6327

Description
RF Bipolar Transistors RF BIP TRANSISTORS
Categorysemiconductor    Discrete semiconductor   
File Size1MB,28 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BFP-720FESD-H6327 Overview

RF Bipolar Transistors RF BIP TRANSISTORS

BFP-720FESD-H6327 Parametric

Parameter NameAttribute value
Product CategoryRF Bipolar Transistors
ManufacturerInfineon
RoHSDetails
Transistor TypeBipolar
TechnologySiGe
Collector- Emitter Voltage VCEO Max4.2 V
Continuous Collector Current30 mA
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseTSFP-4-1
PackagingCut Tape
PackagingMouseReel
PackagingReel
Collector- Base Voltage VCBO4.9 V
DC Current Gain hFE Max400
Operating Frequency43 GHz
Pd - Power Dissipation100 mW
QualificationAEC-Q100
Factory Pack Quantity3000
TypeRF Silicon Germanium
BFP720FESD
Robust Low Noise Silicon Germanium Bipolar RF Transistor
Data Sheet
Revision 1.2, 2012-10-16
RF & Protection Devices

BFP-720FESD-H6327 Related Products

BFP-720FESD-H6327 BFP-720FESD-E6327
Description RF Bipolar Transistors RF BIP TRANSISTORS RF Bipolar Transistors RF BIP TRANSISTORS
Product Category RF Bipolar Transistors RF Bipolar Transistors
Manufacturer Infineon Infineon
RoHS Details Details
Transistor Type Bipolar Bipolar
Technology SiGe SiGe
Collector- Emitter Voltage VCEO Max 4.2 V 4.2 V
Continuous Collector Current 30 mA 30 mA
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style SMD/SMT SMD/SMT
Package / Case TSFP-4-1 TSFP-4-1
Collector- Base Voltage VCBO 4.9 V 4.9 V
DC Current Gain hFE Max 400 400
Operating Frequency 43 GHz 43 GHz
Pd - Power Dissipation 100 mW 100 mW
Factory Pack Quantity 3000 3000
Type RF Silicon Germanium RF Silicon Germanium
Packaging Reel Reel

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