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ZVP2106ASTOA

Description
MOSFET P-Chnl 60V
Categorysemiconductor    Discrete semiconductor   
File Size83KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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ZVP2106ASTOA Overview

MOSFET P-Chnl 60V

ZVP2106ASTOA Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerDiodes
RoHSDetails
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-92-3
Number of Channels1 Channel
Transistor PolarityP-Channel
Vds - Drain-Source Breakdown Voltage- 60 V
Id - Continuous Drain Current- 280 mA
Rds On - Drain-Source Resistance5 Ohms
Vgs - Gate-Source Voltage20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Channel ModeEnhancement
PackagingBulk
Fall Time15 ns
Height4.01 mm
Length4.77 mm
Pd - Power Dissipation700 mW
ProductMOSFET Small Signal
Rise Time15 ns
Factory Pack Quantity2000
Transistor Type1 P-Channel
TypeFET
Typical Turn-Off Delay Time12 ns
Typical Turn-On Delay Time7 ns
Width2.41 mm
Unit Weight0.016000 oz
P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 60 Volt V
DS
* R
DS(on)
=5Ω
ZVP2106A
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
-60
-280
-4
±
20
700
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
-1
5
150
100
60
20
7
15
12
15
-60
-1.5
-3.5
20
-0.5
-100
MAX. UNIT CONDITIONS.
V
V
nA
µA
µA
A
mS
pF
pF
pF
ns
ns
ns
ns
V
DD
≈-18V,
I
D
=-500mA
V
DS
=-18V, V
GS
=0V, f=1MHz
I
D
=-1mA, V
GS
=0V
ID=-1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=-60 V, V
GS
=0
V
DS
=-48 V, V
GS
=0V, T=125°C
(2)
V
DS
=-18 V, V
GS
=-10V
V
GS
=-10V,I
D
=-500mA
V
DS
=-18V,I
D
=-500mA
Static Drain-Source On-State R
DS(on)
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
(2) Sample test.
3-417
Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
(
3
)

ZVP2106ASTOA Related Products

ZVP2106ASTOA ZVP2106AS ZVP2106ASTOB
Description MOSFET P-Chnl 60V MOSFET P-Chnl 60V MOSFET P-Chnl 60V
Product Category MOSFET MOSFET MOSFET
Manufacturer Diodes Diodes Diodes
RoHS Details Details Details
Technology Si Si Si
Mounting Style Through Hole Through Hole Through Hole
Package / Case TO-92-3 TO-92-3 TO-92-3
Number of Channels 1 Channel 1 Channel 1 Channel
Transistor Polarity P-Channel P-Channel P-Channel
Vds - Drain-Source Breakdown Voltage - 60 V - 60 V - 60 V
Id - Continuous Drain Current - 280 mA - 280 mA - 280 mA
Rds On - Drain-Source Resistance 5 Ohms 5 Ohms 5 Ohms
Vgs - Gate-Source Voltage 20 V 20 V 20 V
Minimum Operating Temperature - 55 C - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C + 150 C
Configuration Single Single Single
Channel Mode Enhancement Enhancement Enhancement
Packaging Bulk Bulk Bulk
Fall Time 15 ns 15 ns 15 ns
Pd - Power Dissipation 700 mW 700 mW 700 mW
Product MOSFET Small Signal MOSFET Small Signal MOSFET Small Signal
Rise Time 15 ns 15 ns 15 ns
Factory Pack Quantity 2000 4000 4000
Transistor Type 1 P-Channel 1 P-Channel 1 P-Channel
Type FET FET FET
Typical Turn-Off Delay Time 12 ns 12 ns 12 ns
Typical Turn-On Delay Time 7 ns 7 ns 7 ns
Unit Weight 0.016000 oz 0.016000 oz 0.016000 oz
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