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2N6388

Description
10 A, 80 V NPN Darlington Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE
CategoryDiscrete semiconductor    The transistor   
File Size100KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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2N6388 Overview

10 A, 80 V NPN Darlington Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE

2N6388 Parametric

Parameter NameAttribute value
Brand Nameonsemi
Is it lead-free?Contains lead
Objectid1531625416
Parts packaging codeTO-220 3 LEAD STANDARD
package instructionPLASTIC, CASE 221A-09, 3 PIN
Contacts3
Manufacturer packaging code221A
Reach Compliance Codenot_compliant
ECCN codeEAR99
Samacsys Manufactureronsemi
Samacsys Modified On2021-04-04 23:25:50
YTEOL0
Other featuresLEADFORM OPTIONS ARE AVAILABLE
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-emitter maximum voltage80 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)1000
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)235
Polarity/channel typeNPN
Maximum power dissipation(Abs)45 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
2N6387, 2N6388
Plastic Medium-Power
Silicon Transistors
These devices are designed for general−purpose amplifier and
low−speed switching applications.
Features
www.onsemi.com
High DC Current Gain − h
FE
= 2500 (Typ) @ I
C
= 4.0 Adc
Collector−Emitter Sustaining Voltage − @ 100 mAdc
V
CEO(sus)
= 60 Vdc (Min) − 2N6387
= 80 Vdc (Min) − 2N6388
Low Collector−Emitter Saturation Voltage −
V
CE(sat)
= 2.0 Vdc (Max) @ I
C
= 5.0 Adc − 2N6387, 2N6388
Monolithic Construction with Built−In Base−Emitter Shunt Resistors
TO−220AB Compact Package
These Devices are Pb−Free and are RoHS Compliant*
DARLINGTON NPN SILICON
POWER TRANSISTORS
8 AND 10 AMPERES
65 WATTS, 60 − 80 VOLTS
4
MAXIMUM RATINGS
(Note 1)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak
Base Current
Total Power Dissipation @ T
C
= 25_C
Derate above 25_C
Total Power Dissipation @ T
A
= 25_C
Derate above 25_C
Operating and Storage Junction,
Temperature Range
2N6387
2N6388
2N6387
2N6388
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
P
D
P
D
T
J
, T
stg
Value
60
80
60
80
5.0
10
15
250
65
0.52
2.0
0.016
−65 to +150
Unit
Vdc
Vdc
Vdc
Adc
mAdc
W
W/°C
W
W/°C
°C
2N638xG
AYWW
1
2
3
TO−220
CASE 221A
STYLE 1
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Indicates JEDEC Registered Data.
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Symbol
R
qJC
R
qJA
Max
1.92
62.5
Unit
_C/W
_C/W
2N638x = Device Code
x = 7 or 8
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
2N6387G
Package
TO−220
(Pb−Free)
TO−220
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
2N6388G
©
Semiconductor Components Industries, LLC, 2014
1
November, 2014 − Rev. 15
Publication Order Number:
2N6387/D

2N6388 Related Products

2N6388 2N6388G 2N6387G
Description 10 A, 80 V NPN Darlington Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE USB Interface IC USB to Serial UART Enhanced IC SSOP-28 USB Interface IC USB to Serial UART IC LQFP-32
Brand Name onsemi ON Semiconductor ON Semiconductor
Is it lead-free? Contains lead Lead free Lead free
Parts packaging code TO-220 3 LEAD STANDARD TO-220AB TO-220AB
package instruction PLASTIC, CASE 221A-09, 3 PIN LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN
Contacts 3 3 3
Manufacturer packaging code 221A 221A-09 221A-09
Reach Compliance Code not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 10 A 10 A 10 A
Collector-emitter maximum voltage 80 V 80 V 60 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE) 1000 1000 1000
JEDEC-95 code TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e3 e3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 175 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) 235 260 260
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 45 W 45 W 40 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface TIN LEAD Tin (Sn) Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 20 MHz 20 MHz 20 MHz
Other features LEADFORM OPTIONS ARE AVAILABLE LEADFORM OPTIONS ARE AVAILABLE -
Factory Lead Time - 1 week 2 weeks
Maximum time at peak reflow temperature - 40 40
Base Number Matches - 1 1
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