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BSC265N10LSF-G

Description
MOSFET 30V/20V NChnl Power Trench MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size652KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BSC265N10LSF-G Overview

MOSFET 30V/20V NChnl Power Trench MOSFET

BSC265N10LSF-G Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerInfineon
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTDSON-8
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current40 A
Rds On - Drain-Source Resistance20 mOhms
Vgs th - Gate-Source Threshold Voltage1.2 V
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge21 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Channel ModeEnhancement
PackagingCut Tape
PackagingReel
PackagingMouseReel
Fall Time4 ns
Forward Transconductance - Min21 S
Height1.27 mm
Length5.9 mm
Pd - Power Dissipation78 W
Rise Time24 ns
Factory Pack Quantity5000
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20 ns
Typical Turn-On Delay Time10 ns
Width5.15 mm
Unit Weight0.003527 oz
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