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BZT03D180-TR

Description
Zener Diodes 180 Volt 600W 10%
Categorysemiconductor    Discrete semiconductor   
File Size129KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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BZT03D180-TR Overview

Zener Diodes 180 Volt 600W 10%

BZT03D180-TR Parametric

Parameter NameAttribute value
Product CategoryZener Diodes
ManufacturerVishay
RoHSDetails
Vz - Zener Voltage180 V
Mounting StyleSMD/SMT
Package / CaseSOD-57
Pd - Power Dissipation1.3 W
Voltage Tolerance10 %
Voltage Temperature Coefficient0.11 %/K
Zz - Zener Impedance400 Ohms
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 175 C
ConfigurationSingle
Test Current5 mA
PackagingReel
Height3.6 mm
Ir - Reverse Current1 uA
Length4.2 mm
Factory Pack Quantity5000
Termination StyleAxial
TypeVoltage Regulator
Width3.6 mm
Unit Weight0.013016 oz
BZT03-Series
www.vishay.com
Vishay Semiconductors
Zener Diodes with Surge Current Specification
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Clamping time in picoseconds
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
949539
APPLICATIONS
• Medium power voltage regulators and medium power
transient suppression circuits
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
6.2 to 300
2 to 100
Pulse current
Single
UNIT
V
mA
ORDERING INFORMATION
(Example)
DEVICE NAME
BZT03C6V2
BZT03C6V2
ORDERING CODE
BZT03C6V2-TR
BZT03C6V2-TAP
TAPED UNITS
5000 per 10" tape and reel
5000 per ammopack
MINIMUM ORDER QUANTITY
25 000
25 000
PACKAGE
PACKAGE NAME
SOD-57
WEIGHT
369 mg
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Repetitive peak reverse power
dissipation
Non repetitive peak surge power
dissipation
Junction to ambient air
Junction temperature
Storage temperature range
Forward voltage (max.)
I
F
= 0.5 A
t
p
= 100 μs, T
j
= 25 °C
I = 10 mm, T
L
= constant
On PC board with spacing 25 mm
TEST CONDITION
I = 10 mm, T
L
= 25 °C
T
amb
= 25 °C
SYMBOL
P
tot
P
tot
P
ZRM
P
ZSM
R
thJA
R
thJA
T
j
T
S
V
F
VALUE
3250
mW
1300
10
600
46
K/W
100
175
- 65 to + 175
1.2
°C
°C
V
W
W
UNIT
Rev. 1.7, 11-Sep-12
Document Number: 85599
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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