FXT749 datasheet, PDF - EEWORLD Datasheet

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FXT749: DescriptionBipolar Transistors - BJT; Categorysemiconductor Discrete semiconductor; File Size28KB，1 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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FXT749 Overview

Bipolar Transistors - BJT

FXT749 Parametric

Parameter Name	Attribute value
Product Category	Bipolar Transistors - BJT
Manufacturer	Diodes
RoHS	No
Mounting Style	Through Hole
Package / Case	TO-92-3
Transistor Polarity	PNP
Configuration	Single
Collector- Emitter Voltage VCEO Max	25 V
Collector- Base Voltage VCBO	35 V
Emitter- Base Voltage VEBO	5 V
Maximum DC Collector Current	2 A
Gain Bandwidth Product fT	160 MHz
Maximum Operating Temperature	+ 150 C
DC Current Gain hFE Max	70 at 50 mA at 2 V
Height	4.01 mm
Length	4.77 mm
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	1000 mW
Width	2.41 mm
Unit Weight	0.016000 oz

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PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 1 FEB 94

FEATURES

* 25 Volt V

CEO

* 2 Amp continuous current

* Low saturation voltage

* P

tot

= 1 Watt

FXT749

B

C

E

REFER TO ZTX749 FOR GRAPHS

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

E-Line

TO92 Compatible

VALUE

-35

-25

-5

-6

-2

1

-55 to +200

UNIT

V

A

W

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn-On Voltage

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

MIN.

-35

-25

-5

-0.1

-10

-0.1

-0.12

-0.23

-0.9

-0.8

70

100

75

15

100

200

150

50

160

100

-0.3

-0.5

-1.25

-1

300

MHz

pF

TYP.

MAX.

UNIT

V

µ

A

µ

A

µ

A

CONDITIONS.

I

C

=-100

µ

A, I

E

=0

I

C

=-10mA, I

B

=0*

I

E

=-100

µ

A, I

C

=0

V

CB

=-30V

V

CB

=-30V,

T

amb

=100°C

V

EB

=-4V, I

E

=0

I

C

=-1A, I

B

=-100mA*

I

C

=-2A, I

B

=-200mA*

I

C

=-1A, I

B

=-100mA*

IC=-1A, V

CE

=-2V*

I

C

=-50mA, V

CE

=-2V*

I

C

=-1A, V

CE

=-2V*

I

C

=-2A, V

CE

=-2V*

I

C

=-6A, V

CE

=-2V*

I

C

=-100mA, V

CE

=-5V

f=100MHz

V

CB

=-10V, f=1MHz

Emitter Cut-Off Current I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

V

Static Forward Current h

FE

Transfer Ratio

Transition

Frequency

Output Capacitance

f

T

C

obo

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

3-56

FXT749 Related Products

	FXT749	FXT749STOA
Description	Bipolar Transistors - BJT	Bipolar Transistors - BJT
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT
Manufacturer	Diodes	Diodes
RoHS	No	No
Mounting Style	Through Hole	Through Hole
Package / Case	TO-92-3	TO-92-3
Transistor Polarity	PNP	PNP
Configuration	Single	Single
Collector- Emitter Voltage VCEO Max	25 V	25 V
Collector- Base Voltage VCBO	35 V	35 V
Emitter- Base Voltage VEBO	5 V	5 V
Maximum DC Collector Current	2 A	2 A
Gain Bandwidth Product fT	160 MHz	160 MHz
Maximum Operating Temperature	+ 150 C	+ 150 C
Height	4.01 mm	4.01 mm
Length	4.77 mm	4.77 mm
Minimum Operating Temperature	- 55 C	- 55 C
Pd - Power Dissipation	1000 mW	1000 mW
Width	2.41 mm	2.41 mm
Unit Weight	0.016000 oz	0.016000 oz

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