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DF5A62CFUTE85LF

Description
ESD Suppressors / TVS Diodes ESD Low Capacitance Protection Diode
CategoryCircuit protection   
File Size167KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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ESD Suppressors / TVS Diodes ESD Low Capacitance Protection Diode

DF5A62CFUTE85LF Parametric

Parameter NameAttribute value
Product CategoryESD Suppressors / TVS Diodes
ManufacturerToshiba Semiconductor
RoHSDetails
Vesd - Voltage ESD Contact30 kV
PolarityBidirectional
Number of Channels4 Channel
Termination StyleSMD/SMT
Breakdown Voltage5.8 V
Working Voltage5 V
Cd - Diode Capacitance25 pF
Package / CaseSOT-353-5
Pd - Power Dissipation200 mW
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
Factory Pack Quantity3000
DF5A6.2CFU
TOSHIBA Diodes for Protecting against ESD
DF5A6.2CFU
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
*
This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
The mounting of four devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Low Terminal capacitance: C
T
= 25 pF (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
T
j
T
stg
Rating
200
150
−55
to 150
Unit
mW
°C
°C
1.CATHODE 1
2. ANODE
3.CATHODE2
4.CATHODE3
5.CATHODE4
JEDEC
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
temperature, etc.) may cause this product to decrease in the
TOSHIBA
1-2V1B
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.0062 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V
Z
Z
Z
I
R
C
T
I
Z
= 5 mA
I
Z
= 5 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz
Test Condition
Min
5.8
Typ.
6.2
25
Max
6.6
30
2.5
Unit
V
Ω
μA
pF
Guaranteed Level of ESD Immunity
Test Condition
IEC61000-4-2
(Contact discharge)
ESD Immunity Level
±
30 kV
Criterion: No damage to device elements
Start of commercial production
2003-06
1
2014-03-01
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