TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
SURFACE MOUNT
500 Watt Low Capacitance
Transient Voltage Suppressor
DEVICES
- High Reliability controlled devices
- Unidirectional construction
- Available J-bend termination
- Selections for 5.0 to 75 V standoff voltages (V
WM
)
LEVELS
M, MA, MX, MXL
MSMBJSAC5.0 thru MSMBJSAC75, e3
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Optional up screening available by replacing the M prefix with MA, MX or MXL. These
prefixes specify various screening and conformance inspection options based on
MIL-PRF-19500. Refer to
MicroNote 129
for more details on the screening options
Low capacitance performance of 30pF
Suppresses transients up to 500 W Peak Pulse Power @ 10/1000
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS compliant devices available by adding an “e3” suffix
3σ lot norm screening performed on Standby Current I
D
DO-214AA
APPLICATIONS / BENEFITS
Low Capacitance for data-line protection to 10 MHz
Protection for aircraft fast data rate lines per select waveforms in RTCA/DO-160F (see
MicroNote 130
for Waveform 4 and 5A capability) & ARINC 429 with bit rates of 100 kb/s (per
ARINC 429, Part 1, par. 2.4.1.1)
ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:
o
Class 1: MSMBJSAC5.0 to MSMBJSAC75
o
Class 2: MSMBJSAC5.0 to MSMBJSAC45
o
Class 3: MSMBJSAC5.0 to MSMBJSAC22
o
Class 4: MSMBJSAC5.0 to MSMBJSAC10
Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance
o
Class 1: MSMBJSAC5.0 to MSMBJSAC26
o
Class 2: MSMBJSAC5.0 to MSMBJSAC15
o
Class 3: MSMBJSAC5.0 to MSMBJSAC7.0
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 ºC: 500 watts at 10/1000 μs with impulse repetition rate
(duty factor) of 0.01 % or less*
t
clamping
(0 volts to V
BR
min.): < 5 ns theoretical for unidirectional
Operating and Storage temperature: -65 °C to +150 °C
Steady-State Power dissipation*: 2.5 watts at TL = +75 ºC
Solder temperatures: 260 ºC for 10 s (maximum)
* TVS devices are not typically used for dc power dissipation and are instead operated < V
WM
(rated standoff
voltage) except for transients that briefly drive the device into avalanche breakdown (V
BR
to V
C
region) of the
TVS element.
Also see Figures 5 and 6 for further protection details in rated peak pulse power for
unidirectional and bidirectional configurations respectively.
RF01021 Rev A, October 2010
High Reliability Product Group
Page 1 of 4
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
MECHANICAL AND PACKAGING
Void-free transfer molded thermosetting epoxy body meeting UL94V-0
J-bend tin-lead (90 % Sn, 10 % Pb) or RoHS (100 % Sn) compliant annealed matte-tin plating solderable per
MIL-STD-750, method 2026
Cathode indicated by band
Part number marked on package
Available in Bulk or Custom Tape & Reel packaging
Weight: 0.1 gram (approximately)
PACKAGE DIMENSIONS
PAD LAYOUT
SYMBOLS & DEFINITIONS
Symbol
V
WM
P
PP
V
BR
I
D
Definition
Working Peak (Standoff) Voltage
Peak Pulse Power
Breakdown Voltage
Standby Current
Symbol
I
PP
V
C
Definition
Peak Pulse Current
Clamping Voltage
Breakdown Current for V
BR
I
BR
RF01021 Rev A, October 2010
High Reliability Product Group
Page 2 of 4
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
ELECTRICAL CHARACTERISTICS @ 25
o
C
MICROSEMI PART
NUMBER
REVERSE
STAND-OFF
VOLTAGE
(Note 1)
V
WM
Volts
BREAKDOWN
VOLTAGE
@ I
(BR)
1.0mA
V
(BR)
Volts
Min.
MAXIMUM
STANDBY
CURRENT
@V
WM
I
D
A
MAXIMUM
CLAMPING
VOLTAGE
I
P
= 5.0A*
V
C
Volts
MAXIMUM
PEAK PULSE
CURRENT*
RATING
I
PP
Amps
MAXIMUM
CAPACITANCE
@ O Volts,
f=1 MHz
WORKING
INVERSE
BLOCKING
VOLTAGE
V
WIB
Volts
INVERSE
BLOCKING
LEAKAGE
CURRENT
I
IB
@ V
WIB
A
PEAK INVERSE
BLOCKING
VOLTAGE
V
PIB
Volts
pF
MSMBJSAC5.0
MSMBJSAC6.0
MSMBJSAC7.0
MSMBJSAC8.0
MSMBJSAC8.5
MSMBJSAC10
MSMBJSAC12
MSMBJSAC15
MSMBJSAC18
MSMBJSAC22
MSMBJSAC26
MSMBJSAC36
MSMBJSAC45
MSMBJSAC50
MSMBJSAC75
5.0
6.0
7.0
8.0
8.5
10
12
15
18
22
26
36
45
50
75
7.60
7.90
8.33
8.89
9.44
11.10
13.30
16.70
20.00
24.40
28.90
40.0
50.00
55.50
83.3
300
300
300
100
50
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
10.0
11.2
12.6
13.4
14.0
16.3
19.0
23.6
28.8
35.4
42.3
60.0
77.0
88.0
121
44
41
38
36
34
29
25
20
15
14
11.1
8.6
6.8
5.8
4.1
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
75
75
75
75
75
75
75
75
75
75
75
75
150
150
150
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
100
100
100
100
100
100
100
100
100
100
100
100
200
200
200
*See Figure 3. For the MSMBJSAC75, the maximum clamping voltage V
C
is at the maximum rated Peak Pulse Current (I
PP
) of 4.1 Amps.
Clamping Factor:
The ratio of the numerical value of V
C
to V
(BR)
is typically 1.4 @ full rated power, 1.20 @ 50% rated power. Also see MicroNote 108.
Note 1:
A transient voltage suppressor is normally selected according to voltage (V
WM
), that should be equal to or greater than the dc or continuous peak
operating voltage level.
Note 2:
When pulse testing, test in TVS avalanche direction. Do not pulse in “forward” direction. See section for “Schematic Applications” herein.
GRAPHS
RF01021 Rev A, October 2010
High Reliability Product Group
Page 3 of 4
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
GRAPHS Cont.
SCHEMATIC APPLICATIONS
The TVS low capacitance device configuration is shown in Figure 4. As a further option for unidirectional applications, an additional low
capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in Figure 5. In applications where
random high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and also
provide a low voltage conducting direction. The added rectifier diode should be of similar low capacitance and also have a higher reverse
voltage rating than the TVS clamping voltage V
C
.
If using two (2) low capacitance TVS devices in anti-parallel for bidirectional applications, this added protective feature for both directions
(including the reverse of each rectifier diode) is inherently provided in Figure 6. The unidirectional and bidirectional configurations in Figure 5
and 6 will both result in twice the capacitance of Figure 4.
RF01021 Rev A, October 2010
High Reliability Product Group
Page 4 of 4
京公网安备 11010802033920号
EEWORLD
