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CD214C-T11ALF

Description
ESD Suppressors / TVS Diodes TVS Unidirect Diode 11VOLT
CategoryDiscrete semiconductor    diode   
File Size138KB,5 Pages
ManufacturerBourns
Websitehttp://www.bourns.com
Environmental Compliance
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CD214C-T11ALF Overview

ESD Suppressors / TVS Diodes TVS Unidirect Diode 11VOLT

CD214C-T11ALF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerBourns
Parts packaging codeDO-214AB
package instructionSMC, 2 PIN
Contacts2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time14 weeks
Maximum breakdown voltage14.4 V
Minimum breakdown voltage12.2 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AB
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation400 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage11 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
PL
IA
Features
Lead free
RoHS compliant*
Surface Mount SMC package
Standoff Voltage: 5.0 to 170 volts
Power Dissipation: 1500 watts
*R
oH
S
Model CD214C is currently available,
although not recommended for new
designs.
Model SMCJ
is preferred.
CO
M
NT
CD214C Transient Voltage Suppressor Diode Series
General Information
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
smaller electronic components.
Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AB (SMC)
size format. The Transient Voltage Suppressor series offers a choice of Working Peak Reverse Voltage from 5 V up to 170 V and Breakdown
Voltage up to 200 V. Typical fast response times are less than 1.0 ns for unidirectional devices and less than 5.0 ns for bidirectional devices
from 0 V to Minimum Breakdown Voltage.
Bourns
®
Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration
minimizes roll away.
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
(Note 1,2)
Value
Unit
Minimum Peak Pulse Power Dissipation (TP = 1 ms)
Peak Forward Surge Current
8.3ms Single Half Sine Wave Superimposed on Rated Load
(JEDEC Method)
(Note 3)
Steady State Power Dissipation @ TL = 75 °C
Maximum Instantaneous Forward Voltage @ IPP = 100 A
(For Unidirectional Units Only)
Operating Temperature Range
Storage Temperature Range
1.
2.
3.
4.
5.
PPK
IFSM
PM(AV)
VF
TJ
TSTG
1500
200
5.0
(Note 5)
Watts
Amps
Watts
Volts
°C
°C
-55 to +150
-55 to +175
Non-repetitive current pulse, per Pulse Waveform graph and derated above TA = 25 °C per Pulse Derating Curve.
Thermal Resistance Junction to Lead.
8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).
Single Phase, Half Wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20 %.
VF = 3.5 V on CD214C-T5.0A through CD214C-T90A and VF = 5.0 V on CD214C-T100A through CD214C-T170A.
How To Order
CD 214C - T 5.0 CA LF
Common Code
Chip Diode
Package
214A = SMA/DO-214AC
214B = SMB/DO-214AA
214C = SMC/DO-214AB
Model
T = Transient Voltage Suppressor Series
Working Peak Reverse Voltage
5.0 = 5.0 VRWM (Volts)
170 = 170 VRWM (Volts)
Suffix
A = 5 % Tolerance Device
CA = 5 % Tolerance Bidirectional Device
Terminations
LF = 100 % Sn (lead free)
Asia-Pacific:
Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116
Europe:
Tel: +41-41 768 5555 • Fax: +41-41 768 5510
The Americas:
Tel: +1-951 781-5500 • Fax: +1-951 781-5700
www.bourns.com
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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