®
THDT6511D
VOLTAGE SUPPRESSOR
FOR SLIC PROTECTION
Application Specific Discretes
TRANSIENT
A.S.D.™
FEATURES
s
s
s
s
s
s
DUAL ASYMETRICAL TRANSIENT SUPPRESSOR
PEAK PULSE CURRENT : I
PP
= 40A, 10/100µs
HOLDING CURRENT : 150 mA min.
BREAKDOWN VOLTAGE : 65 V min.
LOW DYNAMIC CHARACTERISTICS
STAND CCITT K20 AND LSSGR
DESCRIPTION
This device has been especially designed to
protect subscriber line cards against overvoltage.
Two diodes clamp positive overloads while
negative surges are suppressed by two protection
thyristors.
A particular attention has been given to the internal
wire bonding. The “4-point” configuration ensures
a reliable protection, eliminating overvoltages in-
troduced by the parasitic inductances of the wiring
(Ldi/dt), especially for very fast transient
overvoltages.
SCHEMATIC DIAGRAM
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
COMPLIES WITH THE FOLLOWING STANDARDS :
CCITT K20 :
VDE 0433 :
VDE 0878 :
I3124 :
10/700µs
5/310µs
10/700µs
5/310µs
1.2/50µs
1/20µs
0.5/700µs
0.2/310µs
2/10µs
2/10µs
1kV
38A
2kV
50A
1.5kV
40A
1kV
38A
2.5kV
125A (*)
2.5kV
125A (*)
1kV
40A (*)
FCC part 68 :
BELLCORE
TR-NWT-001089 :
2/10µs
2/10µs
10/1000µs
10/1000µs
(*) with series resistors or PTC.
b
O
so
te
le
ro
P
SO-8
uc
d
s)
t(
TIP 1
P
te
le
od
r
s)
t(
uc
8 TIP
7 GND
6 GND
5 RING
GND 2
GND 3
RING 4
August 2001 - Ed: 2
1/6
THDT6511D
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25°C)
Symbol
I
PP
Peak pulse current
Parameter
(see note 1)
10/1000µs
5/310µs
2/10µs
t = 300 ms
t=1s
t=5s
Value
40
50
125
10
3.5
1
1
- 55 to + 150
150
260
% I
PP
Unit
A
I
TSM
Non repetitive surge peak on-state current
F = 50 Hz
F = 50 Hz, 60 x 1 s, 2 mn between pulse
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10s
A
I
TSM
T
stg
T
j
T
L
A
Note 1 :
Pulse waveform :
10/1000µs tr=10µs
5/310µs
tr=5µs
2/10µs
tr=2µs
tp=1000µs
tp=310µs
tp=10µs
100
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
THERMAL RESISTANCES
Symbol
R
th (j-a)
Parameter
Junction to ambient
ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C)
Symbol
V
RM
I
RM
V
BR
I
H
Parameter
Stand-off voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakover voltage
Holding current
V
BO
V
F
V
BO
b
O
so
te
le
50
0
t
r
r
P
t
p
d
o
uc
s)
t(
°C
°C
P
te
le
od
r
s)
t(
uc
t
Value
170
Unit
°C/W
I
I
F
V
BR
V
RM
I
RM
V
F
V
Forward voltage drop
Peak forward voltage
Breakover current
Capacitance
Peak pulse current
V
FP
I
BO
I
PP
C
αT
I
H
I
BO
Temperature coefficient
I
pp
2/6
THDT6511D
1 - PARAMETERS RELATED TO DIODE LINE / GND
Symbol
V
F
V
FP
I
F
= 1 A
see curve fig. 1
Test conditions
tp = 100
µs
NA
NA
Min.
Typ.
Max.
2
NA
Unit
V
V
NA : Non Available
2 - PARAMETERS RELATED TO PROTECTION THYRISTOR
Symbol
V
BR
V
BO
I
RM
I
BO
I
BO
I
H
αT
C
V
RM
= 63 V
tp = 100
µs
F = 50 Hz
RG = 600
Ω
110
I
R
= 1mA
Tests conditions
Min.
65
68
Typ.
Max.
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
V
D
= 100 mV
RMS
F = 1KHz
dV/dt
Linear ramp up to 67 % of V
BR
b
O
so
t
le
P
e
ro
uc
d
85
100
450
500
s)
t(
V
V
µA
Unit
P
te
le
5
150
od
r
s)
t(
uc
mA
mA
mA
10
-4
/°C
500
pF
kV /
µs
15
3/6
THDT6511D
DYNAMIC CHARACTERISTICS : V
FP
and V
BO
Figure 1 :
60
10
5
2
250 ns
10 us
10 ms
t
-85
-100
-130
1 us
200 ns
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
LSSGR TEST DIAGRAM
Figure 2 :
To stand the LSSGR test requirements, Rp must be
15
Ω
4/6
Under lightning and power crossing test, the device limits the transient voltage to the values
indicated in the figure
b
O
so
te
le
ro
P
uc
d
s)
t(
P
te
le
od
r
s)
t(
uc
THDT6511D
THDT6511D
TYPICAL APPLICATION
RING
GENERATOR
-V
bat
LINE A
T
E
S
T
R
E
L
A
Y
LINE B
PTC
RING
RELAY
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
Line A
Tip
D1
P1
Line B
Ring
PTC
THBT200S
b
O
so
te
le
ro
P
uc
d
TIP
s)
t(
P
te
le
od
r
s)
t(
uc
Integrated
SLIC
THDT6511D
RING
- For positive surges versus GND (TIP), diode D
1
will conduct.
- For negative surges versus GND (TIP),
protection device P
1
will trigger at maximum
voltage equal to V
BO
.
5/6
PCB Design
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