PRELIMINARY DATA SHEET
SILICON TRANSISTOR
2SC5434
NPN EPITAXIAL SILICON TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
FEATURE
• Ultra super mini-mold thin flat package
(1.4 mm
×
1.8 mm
×
0.59 mm: TYP.)
• Contains same chip as 2SC5008
PACKAGE DIMENSIONS (in mm)
1.4 ± 0.05
0.8 ± 0.1
1.4 ± 0.1
(0.9)
0.45 0.45
0.2
+0.1
–0
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
RATING
20
10
1.5
35
125
150
–65 to +150
UNIT
V
V
TH
3
1
mW
°C
°C
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Reverse Transfer Capacitance
Insertion Power Gain
Noise Figure
SYMBOL
I
CBO
I
EBO
h
FE
f
T
C
re
|S
21e
|
2
NF
TEST CONDITIONS
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 3 V, I
C
= 5 mA
Note 1
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
PIN CONNECTIONS
1: Emitter
2: Base
3: Collector
MIN.
TYP.
MAX.
1000
1000
UNIT
nA
nA
80
5.5
80
0.3
5.5
7.5
1.9
145
GHz
0.7
pF
dB
3.2
dB
Notes 1.
Pulse measurement P
W
≤
350
µ
s, duty cycle
≤
2 %
2.
Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when
emitter pin is connected to the guard pin.
Because this product uses high-frequency process, avoid excessive input of static electricity, etc.
The information in this document is subject to change without notice.
Document No. P13145EJ1V0DS00 (1st edition)
Date Published February 1998 N CP(K)
Printed in Japan
©
0.15
+0.1
–0.05
mA
0.59 ± 0.05
V
0.3
+0.1
–0
2
1998
2SC5434
h
FE
CLASSIFICATION
RANK
Marking
h
FE
EB
TH
80 to 110
FB
TJ
100 to 145
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
150
P
T
- Total Power Dissipation - mW
COLLECTOR CURRENT vs. DC BASE VOLTAGE
20
V
CE
= 3 V
I
C
- Collector Current - mA
Free Air
100
10
50
0
50
100
T
A
- Ambient Temperature - °C
150
0
0.5
V
BE
- DC Base Voltage - V
1.0
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
I
B
= 160
µ
A
I
C
- Collector Current - mA
DC CURRENT GAIN vs. COLLECTOR CURRENT
200
V
CE
= 3 V
20
140
µ
A
120
µ
A
DC Current Gain - h
FE
100
15
100
µ
A
80
µ
A
50
10
60
µ
A
40
µ
A
20
µ
A
5
20
0
5
V
CE
- Collector to Emitter Voltage - V
10
10
0.5
1
2
10
20
5
I
C
- Collector Current - mA
50
2
Preliminary Data Sheet
2SC5434
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
9
16
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
V
CE
= 3 V
f = 2 GH
Z
f
T
- Gain Bandwidth Product - GHz
|S
21e
|
2
- Insertion Power Gain - dB
V
CE
= 3 V
8 f = 2 GH
Z
7
6
5
4
3
2
1
0
1
10
I
C
- Collector Current - mA
NOISE FIGURE vs. COLLECTOR CURRENT
7.00
6.00
100
14
12
10
8
6
4
2
0
1
10
I
C
- Collector Current - mA
100
MAXIMUM AVAILABLE GAIN/INSERTION
POWER GAIN vs. FREQUENCY
35
MAG - Maximum Available Gain - dB
|S
21e
|
2
- Insertion Power Gain - dB
V
CE
= 3 V
f = 2 GH
Z
30
25
20
15
10
5
0
|S
21e
|
2
MAG
V
CE
= 3 V
I
C
= 5 mA
NF - Noise Figure - dB
5.00
4.00
3.00
2.00
1.00
0.00
1
10
I
C
- Collector Current - mA
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.00
50
0.1
1.0
f - Frequency - GHz
10.0
C
re
- Reverse Transfer Capacitance - pF
f = 1 MH
Z
0.10
1
10
V
CB
- Collector to Base Voltage - V
100
Preliminary Data Sheet
3
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