RN1904 datasheet, PDF - EEWORLD Datasheet

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RN1904: DescriptionTOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process); CategoryDiscrete semiconductor The transistor; File Size260KB，7 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/; Environmental Compliance

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RN1904 Overview

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1904 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	conform to
Maker	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G6
Contacts	6
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	BUILT-IN RESISTOR RATIO IS 1
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	6 pF
Collector-emitter maximum voltage	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80
JESD-30 code	R-PDSO-G6
Number of components	2
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
VCEsat-Max	0.3 V

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RN1901~RN1906

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1901,RN1902,RN1903

RN1904,RN1905,RN1906

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

Including two devices in US6 (ultra super mini type with 6 leads)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN2901~RN2906

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN1901

RN1902

RN1903

RN1904

RN1905

RN1906

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

JEDEC

EIAJ

TOSHIBA

Weight: 6.8mg

―

2-2J1A

Equivalent Circuit

(Top View)

Maximum Ratings

(Ta = 25°C) (Q1, Q2 Common)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN1901~1906

RN1901~1904

RN1905, 1906

Symbol

CBO

CEO

EBO

stg

Rating

100

200

150

−55~150

Unit

°C

Total rating

2001-06-07

RN1904 Related Products

	RN1904	RN1902	RN1901	RN1903	RN1906	RN1905
Description	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
package instruction	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	ULTRA SUPERMINI, 2-2J1A, US6, 6 PIN	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6
Contacts	6	6	6	6	6	6
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	BUILT-IN RESISTOR RATIO IS 1	BUILT-IN RESISTOR RATIO IS 1	BUILT-IN RESISTOR RATIO IS 1	BUILT-IN RESISTOR RATIO IS 1	BUILT-IN RESISTOR RATIO IS 10	BUILT-IN RESISTOR RATIO IS 21.36
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-based maximum capacity	6 pF	6 pF	6 pF	6 pF	6 pF	6 pF
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80	50	30	70	80	80
JESD-30 code	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6
Number of components	2	2	2	2	2	2
Number of terminals	6	6	6	6	6	6
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.2 W	0.2 W	0.2 W	0.2 W	0.2 W	0.2 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz
VCEsat-Max	0.3 V	0.3 V	0.3 V	0.3 V	0.3 V	0.3 V
Base Number Matches	-	1	-	1	1	1

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