HCTS7266MS
August 1995
Radiation Hardened
Quad 2-Input Exclusive NOR Gate
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL
PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T14
TOP VIEW
A1 1
B1 2
Y1 3
Y2 4
A2 5
B2 6
GND 7
14 VCC
13 B4
12 A4
11 Y4
10 Y3
9 B3
8 A3
Features
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
• Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/Bit-Day
(Typ)
• Dose Rate Survivability: >1 x 10
• Dose Rate Upset >10
10
12
RAD (Si)/s
RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55
o
C to +125
o
C
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = 2.0V Min
• Input Current Levels Ii
≤
5µA at VOL, VOH
14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
(FLATPACK) MIL-STD-1835 CDFP3-F14
TOP VIEW
A1
B1
1
2
3
4
5
6
7
14
13
12
11
10
9
8
VCC
B4
A4
Y4
Y3
B3
A3
Description
The Intersil HCTS7266MS is a Radiation Hardened quad 2-Input
exclusive NOR Gate. A logic level high on either one of the inputs
(A or B) will force the output (y) low. A high on both inputs, or a low
on both inputs will force the output to a logic high.
The HCTS7266MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of radia-
tion hardened, high-speed, CMOS/SOS Logic Family with TTL
input compatibility.
The HCTS7266MS is supplied in a 14 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Y1
Y2
A2
B2
GND
Functional Diagram
An
Ordering Information
PART
NUMBER
HCTS7266DMSR
TEMPERATURE
RANGE
-55
o
C to +125
o
C
-55
o
C to +125
o
C
SCREENING
LEVEL
Intersil Class
S Equivalent
Intersil Class
S Equivalent
Yn
PACKAGE
14 Lead
SBDIP
14 Lead
Ceramic
Flatpack
14 Lead
SBDIP
14 Lead
Ceramic
Flatpack
Die
A
L
Bn
HCTS7266KMSR
TRUTH TABLE
INPUTS
B
L
H
L
H
OUTPUTS
Y
H
L
L
H
HCTS7266D/
Sample
HCTS7266K/
Sample
+25
o
C
+25
o
C
Sample
Sample
L
H
H
HCTS7266HMSR
+25
o
C
Die
NOTE: L = Logic Level Low, H = Logic level High
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Spec Number
File Number
1
518627
3384.1
Specifications HCTS7266MS
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output.
. . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance
θ
JA
θ
JC
o
C/W
SBDIP Package. . . . . . . . . . . . . . . . . . . .
74
24
o
C/W
o
C/W
Ceramic Flatpack Package . . . . . . . . . . . 116
30
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.6mW/
o
C
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . .500ns Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
1
2, 3
Delta ICC
∆ICC
VCC = 5.5V,
VIN = VCC or GND
1 Input = 2.4V
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
(Note 2)
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC - 0.4V,
VIL = 0V (Note 2)
VCC = 4.5V, VIH = 2.25V,
IOL = 50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.80V
Output Voltage High
VOH
VCC = 4.5V, VIH = 2.25V,
IOH = -50µA, VIL = 0.80V
VCC = 5.5V, VIH = 2.75V,
IOH = -50µA, VIL = 0.80V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
2, 3
1
2, 3
1
2, 3
1, 2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
MIN
-
-
-
-
4.8
4.0
-4.8
-4.0
-
MAX
10
200
1.6
3.2
-
-
-
-
0.1
UNITS
µA
µA
mA
mA
mA
mA
mA
mA
V
PARAMETER
Quiescent Current
SYMBOL
ICC
(NOTE 1)
CONDITIONS
VCC = 5.5V,
VIN = VCC or GND
Output Current
(Sink)
IOL
Output Current
(Source)
IOH
Output Voltage Low
VOL
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
VCC
-0.1
-
-
-
-
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
V
1
2, 3
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
±0.5
±5.0
-
µA
µA
-
Noise Immunity
Functional Test
NOTES:
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.80V (Note 3)
7, 8A, 8B
1. All voltages referenced to device GND.
2. Force/Measure functions may be interchanged.
3. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
Spec Number
2
518627
Specifications HCTS7266MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
9
10, 11
TPLH
VCC = 4.5V, VIH = 3.0V
VIL = 0V
9
10, 11
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
2
2
2
2
MAX
20
22
27
29
UNITS
ns
ns
ns
ns
PARAMETER
Propagation Delay
Input to Output
SYMBOL
TPHL
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V, VIH = 3.0V
VIL = 0V
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Capacitance Power
Dissipation
SYMBOL
CPD
CONDITIONS
VCC = 5.0V, VIH = 5.0V,
VIL = 0.0V, F = 1MHz
NOTES
1
1
Input Capacitance
CIN
VCC = 5.0V, VIH = 5.0V,
VIL = 0.0V, F = 1MHz
1
1
Output Transition
Time
TTHL
TTLH
VCC = 4.5V, VIH = 4.5V,
VIL = 0.0V
1
1
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TEMPERATURE
+25
o
C
+125
o
C
+25
o
C
+125
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-
-
-
-
1
1
MAX
30
45
10
10
15
22
UNITS
pF
pF
pF
pF
ns
ns
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
LIMITS
TEMPERATURE
+25
o
C
+25
o
C
MIN
-
-
MAX
0.2
3.2
UNITS
mA
mA
PARAMETER
Quiescent Current
Delta ICC
SYMBOL
ICC
∆ICC
(NOTES 1, 2)
CONDITIONS
VCC = 5.5V, VIN = VCC or GND
VCC = 5.5V,
VIN = VCC or GND
1 Input = 2.4V
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC-0.4V, VIL = 0V
VCC = 4.5V and 5.5V,
VIH = VCC/2,
VIL = 0.8V, IOL = 50µA
VCC = 4.5V and 5.5V,
VIH = VCC/2,
VIL = 0.8V, IOH = -50µA
Output Current (Sink)
Output Current (Source)
Output Voltage Low
IOL
IOH
VOL
+25
o
C
+25
o
C
+25
o
C
4.0
-4.0
-
-
-
0.1
mA
mA
V
Output Voltage High
VOH
+25
o
C
VCC
-0.1
-
V
Spec Number
3
518627
Specifications HCTS7266MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
LIMITS
TEMPERATURE
+25
o
C
+25
o
C
MIN
-
-
MAX
±5
-
UNITS
µA
-
PARAMETER
Input Leakage Current
Noise Immunity
Functional Test
Propagation Delay
Input to Outputt
Propagation Delay
Input to Output
NOTES:
SYMBOL
IIN
FN
(NOTES 1, 2)
CONDITIONS
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIH = 2.25V,
VIL = 0.80V @ 200K RAD,
(Note 3)
VCC = 4.5V, VIH = 3.0V, VIL = 0V
VCC = 4.5V, VIH = 3.0V, VIL = 0V
TPHL
TPLH
+25
o
C
+25
o
C
2
2
22
29
ns
ns
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
3. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
GROUP B
SUBGROUP
5
5
PARAMETER
ICC
IOL/IOH
DELTA LIMIT
3µA
-15% of 0 Hour
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
Initial Test (Preburn-In)
Interim Test
I
(Postburn-In)
Interim Test
II
(Postburn-In)
PDA
Interim Test
III
(Postburn-In)
PDA
Final Test
Group A (Note 1)
Group B
Subgroup B-5
Subgroup B-6
Group D
NOTE:
1. Alternate Group A in accordance with method 5005 of MIL-STD-883 may be exercised.
METHOD
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
Sample/5005
Sample/5005
Sample/5005
Sample/5005
GROUP A SUBGROUPS
1, 7, 9
1, 7, 9
1, 7, 9
1, 7, 9, Deltas
1, 7, 9
1, 7, 9, Deltas
2, 3, 8A, 8B, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
1, 7, 9
1, 7, 9
Subgroups 1, 2, 3, 9, 10, 11
READ AND RECORD
ICC, IOL/H
ICC, IOL/H
ICC, IOL/H
Spec Number
4
518627
Specifications HCTS7266MS
TABLE 7. TOTAL DOSE IRRADIATION
TEST
CONFORMANCE
GROUPS
Group E Subgroup 2
NOTE:
1. Except FN which will be performed 100% Go/No-Go.
METHOD
5005
PRE RAD
1, 7, 9
POST RAD
Table 4
READ AND RECORD
PRE RAD
1, 9
POST RAD
Table 4 (Note 1)
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OSCILLATOR
OPEN
GROUND
1/2 VCC = 3V
±
0.5V
VCC = 6V
±
0.5V
50kHz
25kHz
STATIC BURN-IN I TEST CONDITIONS (Note 1)
3, 4, 10, 11
1, 2, 5, 6, 7, 8, 9, 12, 13
-
14
-
-
STATIC BURN-IN II TEST CONNECTIONS (Note 1)
3, 4, 10, 11
7
-
1, 2, 5, 6, 8, 9, 12,
13, 14
-
-
DYNAMIC BURN-IN TEST CONNECTIONS (Note 2)
-
NOTES:
1. Each pin except VCC and GND will have a resistor of 10KΩ
±
5% for static burn-in.
2. Each pin except VCC and GND will have a resistor of 1KΩ
±
5% for dynamic burn-in.
7
3, 4, 10, 11
14
1, 5, 8, 12
2, 6, 9, 13
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN
3, 4, 10, 11
GROUND
7
VCC = 5V
±
0.5V
1, 2, 5, 6, 8, 9, 12, 13, 14
NOTE: Each pin except VCC and GND will have a resistor of 47KΩ
±
5% for irradiation testing.
Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number
5
518627
京公网安备 11010802033920号
EEWORLD
