
Small Signal Field-Effect Transistor, 2.3A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSOP-6
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | Infineon |
| package instruction | GREEN, PLASTIC, TSOP-6 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Other features | AVALANCHE RATED |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 30 V |
| Maximum drain current (Abs) (ID) | 2.3 A |
| Maximum drain current (ID) | 2.3 A |
| Maximum drain-source on-resistance | 0.057 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 17 pF |
| JESD-30 code | R-PDSO-G6 |
| Humidity sensitivity level | 1 |
| Number of components | 2 |
| Number of terminals | 6 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL AND P-CHANNEL |
| Maximum power dissipation(Abs) | 0.5 W |
| Guideline | AEC-Q101 |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |

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