MH64S64APFH-6 datasheet, PDF - EEWORLD Datasheet

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MH64S64APFH-6: Description4294967296-BIT (67108864 - WORD BY 64-BIT)SynchronousDRAM; Categorystorage storage; File Size612KB，52 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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MH64S64APFH-6 Overview

4294967296-BIT (67108864 - WORD BY 64-BIT)SynchronousDRAM

MH64S64APFH-6 Parametric

Parameter Name	Attribute value
Maker	Mitsubishi
Parts packaging code	DIMM
package instruction	DIMM, DIMM144,32
Contacts	144
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	DUAL BANK PAGE BURST
Maximum access time	5.4 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N144
memory density	4294967296 bi
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	144
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM144,32
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	8192
self refresh	YES
Maximum standby current	0.016 A
Maximum slew rate	2.88 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	0.8 mm
Terminal location	DUAL

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Preliminary Spec.

Some contents are subject to change without notice.

MITSUBISHI LSIs

MH64S64APFH-6,-6L,-7,-7L

4294967296-BIT (67108864 - WORD BY 64-BIT)SynchronousDRAM

DESCRIPTION

The MH64S64APFH is 67108864 - word by 64-bit

Synchronous DRAM module. This consists of

sixteen industry standard 32Mx8 Synchronous

DRAMs in Small TSOP and one industory

standard EEPROM in TSSOP.

The mounting of Small TSOP on a card edge

Dual Inline package provides any application

where high densities and large quantities of

memory are required.

This is a socket type - memory modules, suitable

for easy interchange or addition of modules.

Utilizes industry standard 32M x 8 Sy nchronous DRAMs

Small TSOP and industry standard EEPROM in TSSOP

144-pin (72-pin dual in-line package)

single 3.3V±0.3V power supply

Max. Clock frequency -6:133MHz,-7:100MHz

Fully synchronous operation referenced to clock rising

edge

4 bank operation controlled by BA0,1(Bank Address)

/CAS latency- 2/3(programmable)

Burst length- 1/2/4/8/Full Page(programmable)

FEATURES

Frequency

-6,-6L

-7,-7L

133MHz

100MHz

CLK Access Time

(Component SDRAM)

Burst type- sequential / interleave(programmable)

Column access - random

Auto precharge / All bank precharge controlled by A10

Auto refresh and Self refresh

8192 refresh cycle /64ms

LVTTL Interface

5.4ns(CL=3)

6.0ns(CL=2)

APPLICATION

main memory or graphic memory in computer systems

PCB Outline

(Front)

(Back)

143

144

MIT-DS-0392-0.1

MITSUBISHI

ELECTRIC

( 1 / 52 )

16.Apr.2000

MH64S64APFH-6 Related Products

	MH64S64APFH-6	MH64S64APFH-7L	MH64S64APFH-7	MH64S64APFH-6L
Description	4294967296-BIT (67108864 - WORD BY 64-BIT)SynchronousDRAM	4294967296-BIT (67108864 - WORD BY 64-BIT)SynchronousDRAM	4294967296-BIT (67108864 - WORD BY 64-BIT)SynchronousDRAM	4294967296-BIT (67108864 - WORD BY 64-BIT)SynchronousDRAM
Parts packaging code	DIMM	DIMM	DIMM	DIMM
package instruction	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32
Contacts	144	144	144	144
Reach Compliance Code	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99
access mode	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST
Maximum access time	5.4 ns	6 ns	6 ns	5.4 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz	100 MHz	100 MHz	133 MHz
I/O type	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144
memory density	4294967296 bi	4294967296 bi	4294967296 bi	4294967296 bi
Memory IC Type	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
memory width	64	64	64	64
Number of functions	1	1	1	1
Number of ports	1	1	1	1
Number of terminals	144	144	144	144
word count	67108864 words	67108864 words	67108864 words	67108864 words
character code	64000000	64000000	64000000	64000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C
organize	64MX64	64MX64	64MX64	64MX64
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM144,32	DIMM144,32	DIMM144,32	DIMM144,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192
self refresh	YES	YES	YES	YES
Maximum standby current	0.016 A	0.016 A	0.016 A	0.016 A
Maximum slew rate	2.88 mA	2.72 mA	2.72 mA	2.88 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	DUAL	DUAL	DUAL	DUAL
Maker	Mitsubishi	Mitsubishi	Mitsubishi	-

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