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MH28S72PJG-6

Description
9,663,676,416-BIT ( 134,217,728-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Categorystorage    storage   
File Size988KB,57 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric Compare View All

MH28S72PJG-6 Overview

9,663,676,416-BIT ( 134,217,728-WORD BY 72-BIT ) Synchronous DYNAMIC RAM

MH28S72PJG-6 Parametric

Parameter NameAttribute value
MakerMitsubishi
Parts packaging codeDIMM
package instructionDIMM, DIMM168
Contacts168
Reach Compliance Codeunknow
ECCN codeEAR99
access modeDUAL BANK PAGE BURST
Maximum access time5.4 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N168
memory density9663676416 bi
Memory IC TypeSYNCHRONOUS DRAM MODULE
memory width72
Number of functions1
Number of ports1
Number of terminals168
word count134217728 words
character code128000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128MX72
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM168
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply3.3 V
Certification statusNot Qualified
refresh cycle8192
self refreshYES
Maximum standby current0.351 A
Maximum slew rate6.795 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH28S72PJG -5,-6,-7
9,663,676,416-BIT ( 134,217,728-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
DESCRIPTION
The MH28S72PJG is 134,217,728 - word x 72-bit
Sy nchronous DRAM stacked structural module. This
consist of t hirty -six industry standard 64M x 4
Sy nchronous DRAMs in TSOP.
The stacked structure of TSOP on a card edge dual in-
line package prov ides any application where high
densities and large of quantities memory are required.
This is a socket-ty pe memory m odule ,suitable f or
easy interchange or addition of m odule.
85pin
1pin
FEATURES
Frequency
-5
-6
-7
133MHz
133MHz
100MHz
CLK Access Time
(at Latch mode,Components)
94pin
95pin
10pin
11pin
5.4ns(CL=3)
5.4ns(CL=4)
6.0ns(CL=3)
124pin
40pin
41pin
Utilizes industry standard 64M X 4 Synchronous DRAMs in
TSOP package , industry standard Resister in TSSOP package ,
and industry standard PLL in TSSOP package.
Single 3.3V +/- 0.3V supply
Burst length 1/2/4/8/Full Page (programmable)
Burst type sequential / interleave (programmable)
Column access random
Burst W rite / Single W rite (programmable)
Auto precharge / Auto bank precharge controlled by A10
Auto refresh and Self refresh
LVTTL Interface
8192 refresh cycles ev ery 64ms
125pin
APPLICATION
Main memory unit for computers, Microcomputer memory.
168pin
84pin
MIT-DS-406-0.2
MITSUBISHI
ELECTRIC
27/Mar. /2001
1

MH28S72PJG-6 Related Products

MH28S72PJG-6 MH28S72PJG-7 MH28S72PJG-5
Description 9,663,676,416-BIT ( 134,217,728-WORD BY 72-BIT ) Synchronous DYNAMIC RAM 9,663,676,416-BIT ( 134,217,728-WORD BY 72-BIT ) Synchronous DYNAMIC RAM 9,663,676,416-BIT ( 134,217,728-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Maker Mitsubishi Mitsubishi Mitsubishi
Parts packaging code DIMM DIMM DIMM
package instruction DIMM, DIMM168 DIMM, DIMM168 DIMM, DIMM168
Contacts 168 168 168
Reach Compliance Code unknow unknow unknown
ECCN code EAR99 EAR99 EAR99
access mode DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST
Maximum access time 5.4 ns 6 ns 5.4 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 133 MHz 100 MHz 133 MHz
I/O type COMMON COMMON COMMON
JESD-30 code R-XDMA-N168 R-XDMA-N168 R-XDMA-N168
memory density 9663676416 bi 9663676416 bi 9663676416 bit
Memory IC Type SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
memory width 72 72 72
Number of functions 1 1 1
Number of ports 1 1 1
Number of terminals 168 168 168
word count 134217728 words 134217728 words 134217728 words
character code 128000000 128000000 128000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C
organize 128MX72 128MX72 128MX72
Output characteristics 3-STATE 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM DIMM
Encapsulate equivalent code DIMM168 DIMM168 DIMM168
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
power supply 3.3 V 3.3 V 3.3 V
Certification status Not Qualified Not Qualified Not Qualified
refresh cycle 8192 8192 8192
self refresh YES YES YES
Maximum standby current 0.351 A 0.286 A 0.351 A
Maximum slew rate 6.795 mA 6.37 mA 6.795 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V
surface mount NO NO NO
technology CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD NO LEAD
Terminal pitch 1.27 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL

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